Shulou(Shulou.com)12/24 Report--

CTOnews.com December 1 news, recently, Shenzhen Baiwei Storage Technology Co., Ltd. wafer-level advanced closed test and manufacturing project officially landed in Dongguan Songshan Lake High-tech Industrial Development Zone, the signing ceremony was successfully held in Dongguan.

According to reports, wafer-level advanced closed testing is a semiconductor manufacturing process between front wafer manufacturing and back packaging testing. It uses lithography, etching, electroplating, PVD, CVD, CMP, Strip and other front wafer manufacturing processes to realize Bumping, RDL, Fan-in, Fan-out, TSV and other processes, not only can the chip be directly sealed on the wafer. Save physical space, but also can integrate multiple chips on the same wafer to achieve a higher degree of integration.

Baiwei Storage said that the ground wafer-level advanced closed test project is conducive to the company's products to achieve greater bandwidth, higher speed, more flexible heterogeneous integration and lower energy consumption. empower customers in applications such as mobile consumer electronics, high-end supercomputing, games, artificial intelligence and the Internet of things.

Baiwei Storage also revealed that the company has mastered 16-layer Die, 30-40 μ m ultra-thin Die, multi-chip heterogeneous integration and other advanced packaging processes to support the innovation and large-scale production of NAND, DRAM chips and SiP packaging products.

Shenzhen Baiwei Storage Technology Co., Ltd. was founded in 2010, specializing in memory chip research and development and closed test manufacturing, is a national high-tech enterprise, national specialized special new small giant enterprise, and won the strategic investment of the national big fund.

According to previous reports from CTOnews.com, Baiwei has launched UFS 3.1high-speed flash memory with a write speed of up to 1800MB/s, which is more than four times that of the previous generation of general-purpose flash memory, with a read speed of 2100MB/s and a capacity of 256GB (512GB and 1TB capacity will be launched in the future), with a size of 11.5x13.0x1.0mm for flagship smartphone products.

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