Shulou(Shulou.com)11/24 Report--

On November 9, the plant of Yuhongjin Phase II Semiconductor Industrial Park held the capping ceremony of the main structure, which marked the significant progress in the layout and construction of the company's gallium nitride Super IDM industrial chain. Leaders of Jinghe Xincheng Management Committee in Xixian New area, representatives of Jiangsu Chamber of Commerce, representatives of participating parties, Yan Huaibao, chairman of Yu Hongjin Semiconductor, Professor Sakai, Chief engineer of Yu Hongjin, and all staff of Yu Hongjin attended the sealing ceremony.

Yu Hongjin Semiconductor representative delivered a speech at the capping ceremony, saying that the capping of the main structure marked the phased progress of the project construction and laid a solid foundation for the follow-up construction and the realization of industrial goals. At the same time, we will continue to work side by side with designers, constructors and supervisors to further strictly control quality and strengthen safety management, so as to create favorable conditions for the successful completion and smooth commissioning of the second phase, and build the project into a semiconductor industry cluster.

Yuhongjin Semiconductor Industrial Park project is invested and built by Jiangxi Yuhongjin Chip Technology Co., Ltd., focusing on gallium nitride chip R & D and manufacturing, integrating upstream equipment materials and downstream terminal applications of semiconductor industry chain to build Super IDM industrial cluster in an all-round way. The project is located in Fuzhou High-tech Industrial Zone, Jiangxi Province, with a total construction area of about 262000 square meters. The construction of the project officially started in July 2022, the milestone period of the main structure was completed one month ahead of schedule, and the secondary structure has been built ahead of schedule. The first batch line is expected to be completed by the end of 2024, with a monthly production capacity of 60,000 to 70,000 pieces. After the project is completed and put into production, the monthly production capacity will reach 250000 pieces, which will become the largest gallium nitride IDM plant in the world.

Yuhong Jin has achieved a stable production capacity of 15000 pieces from the construction of the factory (the first phase of the industrial park) to the pilot line in the past 1.5 years. The first phase of the industrial park also has the largest number of equipment production lines with the most complete processes in the industry. With the completion and commissioning of the second phase of the industrial park project, the semiconductor equipment developed by Yu Hongjin and supported by China will be used on a large scale, such as MOCVD, etching machines and other key equipment. At present, the self-developed MOCVD equipment has been put on the line and entered the final debugging stage. After the mature production process adjustment of the pilot line, the speed of subsequent construction, debugging and mass production will be extremely rapid, which will further greatly reduce the cost and improve the efficiency. At the same time, more than a dozen lithography machines ordered by Yu Hongjin will arrive and enter the factory in the next two years, and all of them will be used in the production line of the second phase of the industrial park. At that time, we will synchronize the latest device-side messages for everyone.

The smooth closure of Yuhongjin Phase II Industrial Park project marks the realization of Yuhongjin Super IDM industrial efficiency revolution by pressing the "fast forward key" and accelerating the popularization of gallium nitride devices.

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