Shulou(Shulou.com)11/24 Report--

CTOnews.com October 31 news, according to a recent report released by Jibang Consulting, industry insiders said that 2023 is "the first year of 8-inch SiC". Global power semiconductor giants such as Wolfspeed and Italian semiconductors have accelerated the pace of research and development of 8-inch SiC, while China has made major breakthroughs in SiC production equipment, substrate and epitaxy.

Photo Source: Shandong Tianyue Advanced Technology Co., Ltd. Jibang Consulting said that at least 10 domestic enterprises and institutions are promoting the development of 8-inch silicon carbide (SiC) substrate. CTOnews.com is attached here as follows:

Including Shanxi scintillation crystals (Semisic)

Jingsheng Mechanical and Electrical (JSJ)

Shandong Tianyue Advanced Science and Technology (SICC)

Guangzhou Nansha Wafer Semiconductor Technology (Summit Crystal)

Hebei Tongguang (Synlight)

Institute of Physics, Chinese Academy of Sciences

Shandong University

Beijing Tianke Heda Blue Light Semiconductor (TankeBlue)

Harbin Keyou Semiconductor (KY Semiconductor)

Hangzhou dry Crystal Semiconductor (IV-Semitec).

As the third generation semiconductor material, SiC has the advantages of wider band gap, higher breakdown electric field, excellent thermal conductivity and so on. Its excellent performance in high temperature, high voltage and high frequency applications makes it a cornerstone in the field of semiconductor materials.

Driven by the growth of downstream demand, the SiC industry is in the stage of rapid expansion. TrendForce analysis predicts that the market size of SiC power devices will reach US $2.28 billion in 2023 (CTOnews.com Note: currently about RMB 16.69 billion), with an annual growth rate of 41.4%. By 2026, the market is expected to expand further, to $5.33 billion (currently about 39.016 billion yuan).

Growing demand in areas such as electric vehicles, 5G communications, photovoltaic and memory storage is currently driving the rapid growth of the silicon carbide (SiC) industry. Major players in China are stepping up research and development efforts to overcome technical challenges and gain significant market share.

According to the analysis of TrendForce, the SiC industry is dominated by 6-inch substrates, accounting for as much as 80 per cent of the market share, while 8-inch substrates account for only 1 per cent. The transition to a larger 8-inch wafer is a key strategy to further reduce the cost of SiC devices. As the 8-inch wafer matures, its pricing is expected to be about 1.5 times that of the 6-inch wafer, while the wafer production is about 1.8 times that of the 6-inch SiC wafer, greatly improving the wafer utilization.

From an industry point of view, the cost structure of SiC devices includes substrate, epitaxy, taping and packaging processes, of which the substrate accounts for about 45% of the total production cost.

In order to reduce the cost of each device, the strategy revolves around expanding the SiC substrate and increasing the number of chips per substrate. It is worth noting that an 8-inch SiC substrate has a significant cost advantage over a 6-inch similar substrate.

The substrate (substrate) is a wafer made of semiconductor single crystal materials. The substrate can directly enter the wafer manufacturing process to produce semiconductor devices, or epitaxial processing can be carried out to produce epitaxial wafers.

Epitaxy refers to the process of growing a new single crystal layer on the single crystal substrate which has been carefully cut, ground and polished. The new single crystal can be the same material as the substrate or different materials (homoepitaxial or heteroepitaxial).

CTOnews.com attaches a link to the original report here, which can be read in depth by interested users.

Related readings:

"the yield is over 50%, and Global Crystal, the third largest silicon wafer factory in the world, will try to produce 8-inch SiC next year."

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