Shulou(Shulou.com)11/24 Report--

CTOnews.com October 21 news, Samsung held today in the storage technology day event, to the outside world to show a number of new products, including the next generation HBM3E DRAM called "Shinebolt", can meet the needs of the next generation of AI data center applications.

Samsung says the "Shinebolt"HBM3E DRAM has a speed of 9.8 Gbps per pin, which can achieve a transfer rate of 1.2 TBps, continuously improving the total cost of ownership (TCO) and accelerating AI model training and inference tasks in the data center.

To achieve more layers stacked and improve heat dissipation, Samsung optimized its Non-Conductive Film (NCF) technology to eliminate gaps between chip layers and maximize thermal conductivity.

Samsung's 8H and 12H HBM3 products are currently in mass production, and samples of Shinebolt are being shipped to customers. Leveraging its strength as a total semiconductor solutions provider, the company also plans to offer customized turnkey services that combine next-generation HBM, advanced packaging technology and foundry products.

CTOnews.com learned from the press release that Samsung also showcased a number of new products, including 32Gb DDR5 DRAM with the industry's highest capacity, the industry's first 32Gbps GDDR7, and PB class PBSSD, which significantly improved the storage capabilities of server applications.

Related Reading:

Bandwidth up to 1.228TB / s, Samsung delivers HBM3E memory sample "Shinebolt"

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