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CTOnews.com, Oct. 19 (Xinhua) Samsung, the world's largest supplier of NAND flash memory, has big plans for the development of its V-NAND (what Samsung calls 3D NAND), and Samsung shared some information this week. The company confirmed that it was producing a ninth-generation V-NAND flash memory with more than 300 layers as planned, and said it would be the largest 3D NAND in the industry.

"the ninth generation of V-NAND is based on a two-tier structure, with the highest number of layers in the industry, and mass production will begin early next year." Lee Jung-Bae, president and head of the memory business of Samsung Electronics, wrote in a blog post.

CTOnews.com noted that it was reported in August that Samsung was working on a ninth-generation V-NAND with more than 300 layers and would continue to use the two-tier technology that Samsung first used in 2020. And Samsung now says that its 3D NAND will have more effective layers than its competitors, and we now know that SK Hynix's next-generation 3D NAND will have 321 layers, so Samsung's ninth-generation V-NAND should have more layers.

The increase in the number of layers will allow Samsung to increase the storage density of its 3D NAND devices. The company expects future flash types to improve not only storage density but also performance.

Samsung is also working on the next generation of value-creating technologies, including a new structure that maximizes the input / output (I / O) speed of the V-NAND. " Li Zhengpei said.

It is not known how Samsung's ninth-generation V-NAND will perform in terms of performance, but it is believed that the company will use this memory to produce its upcoming solid-state drive, possibly with a PCIe Gen5 interface.

As for longer-term technological innovation, Samsung is committed to minimizing unit interference, reducing height and maximizing the number of vertical layers, which will enable it to achieve the smallest unit size in the industry. These innovations will play a key role in driving Samsung's vision of having more than 1000 layers of 3D NAND and highly differentiated memory solutions.

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