Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizen Alejandro86 for the clue delivery! CTOnews.com October 18 news, according to South Korean media businesskorea news, Samsung has confirmed that its fifth-generation HBM3E product is named "Shinebolt".

▲ graphic source South Korean media businesskorea Korean media claimed that Samsung has begun to provide customers with this "Shinebolt" sample for quality testing, the specification of the sample is 8 layers of 24GB. In addition, Samsung will soon complete the development of 12-tier 36GB products.

Shinebolt's maximum big data transmission speed (bandwidth) is about 50% higher than HBM3, reaching 1.228TB / s. Although Samsung's HBM development and production speed lags behind SK Hynix to some extent, Samsung still plans to regain its leading position in advanced memory production.

The key to HBM lies in the connection between each layer. Samsung has been using hot compressed non-conductive film (TC-NCF) process since the beginning of HBM production, while SK Hynix uses mass reflux molding bottom filling (MR-MUF) process. Of course, the advantages and disadvantages of the two still have to be judged by the market.

Since it has lagged behind SK Hynix in the development and production speed of HBM, Samsung has also begun to reformulate its strategy to regain its market position. Samsung is currently considering speeding up the development of HBM's "hybrid connection" process to "change the rules of the game".

CTOnews.com also found that Lee Jung-bae, president of Samsung's memory business, had previously said: "We are currently producing HBM3 and are successfully developing the next generation product HBM3E, and we will further expand production of HBM to meet customer needs."

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