Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizens, soft media new friends 1933769, Xichang old clues delivery! CTOnews.com October 17, Samsung Electronics revealed the company's latest development of memory chips and demonstrated Samsung's ambitions for the density limit of memory chips and the development of breakthrough materials.

Samsung has produced products based on its ninth-generation V-NAND flash memory and hopes to achieve mass production early next year, according to Lee Jung-Bae, head of Samsung's storage business. In addition, the company is developing the industry's leading 11nm-class DRAM chip.

Samsung is developing 3D stacking structures and new materials for DRAM, and for NAND flash memory, Samsung is achieving the smallest cell size in the semiconductor industry by increasing the number of stacking layers while reducing height, he said.

"in the coming era of DRAM below 10nm and more than 1000 layers of V-NAND chips, new structures and materials are very important," he said.

Of course, AI chips are also crucial to Samsung Electronics. The company has now begun to produce HBM3 high-performance memory chips. In addition, it is developing the next generation of HBM3E.

Samsung hopes to produce "customized" HBM chips for its customers, Mr. Lee said. "We are focusing on properly addressing the requirements related to new applications such as super-scale AI," and "We will continue to advance the memory chip production line to overcome diverse needs and delivery cycles for long memory chips."

Samsung Electronics will host Samsung memory Technology Day 2023 in Silicon Valley on October 20, when the South Korean chipmaker will launch some of the latest memory chip technologies and products, and CTOnews.com will bring you more coverage.

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