Shulou(Shulou.com)11/24 Report--

On October 13, Yu Hongjin Semiconductor officially held the gallium nitride (GaN) device brand conference in Shenzhen International Convention and Exhibition Center (Baoan New Pavilion), and honored Hongjin 2023 GaN power electronic devices and investment promotion conference. The conference, hosted by Zhang Lei, brand strategy officer of Yu Hongjin, showed the ecological model of Super IDM industrial cluster to the industry for the first time, bringing about the efficiency revolution of gallium nitride semiconductor industry chain. Achieved 1.5 years from the establishment of the plant to the pilot line stable production capacity of 15,000 pieces, 7-day extension to the finished device cycle, mass production average yield of 85%, R & D cycle and line construction cost reduced by 2% compared with the industry. More than a dozen media, a number of local government investment groups, dozens of industry investment institutions, and dozens of representatives of upstream and downstream enterprises participated in the conference.

Zhang Lei, Brand Strategy Officer of Hongjin Semiconductor, ▲

At the press conference, Professor Yoshiro Sakai, one of the founders of GaN semiconductor industry, shared with the audience the historical evolution, current development and future opportunities of gan semiconductor technology. Yu Hongjin pointed out that "with its remarkable performance characteristics, the third generation compound semiconductors show a wide demand prospect in the fields of new energy vehicles, 5G communications, renewable energy and so on, and their device production technology and technology are becoming more and more mature. However, the current market penetration rate is still very low, especially compared with silicon-based devices, there is still an order of magnitude gap" in the industry.

On the issue of "how to achieve faster and larger scale application and promotion of gallium nitride", Yuhongjin Semiconductor returns to the essence of industrial value by returning to the essence of industrial value. This paper puts forward the idea of "industrial value = energy efficiency improvement-replacement cost > 0". It is considered that high performance is the driving force to promote application innovation, while low cost is the basis for promoting application popularization. At present, the current situation of the industry is that many manufacturers around the world are actively promoting the popularization of gallium nitride technology applications, among which more overseas manufacturers focus on the application of high-performance devices. Domestic manufacturers are more through the low cost of conventional devices to promote gallium nitride applications.

Gallium nitride (GaN) devices are no more expensive than silicon-based devices in terms of material cost. Yu Hongjin believes that the reason why the permeability of gallium nitride is still low is not that the scale of gallium nitride devices is still insufficient, which makes it difficult to share the cost. Because the scale is the result rather than the cause, the essential problem appears in the industrial efficiency. Only by improving the system efficiency, can we promote the large-scale application of the device with lower cost. Only by understanding the material principle of nitride semiconductors from the first principle can we achieve positive research and development and process, which is what we call KNOW HOW. Only in this way can we improve the efficiency of device research and development, and at the same time, we need to master the optimization ability of equipment to meet the manufacturing needs of devices, improve the yield, improve production efficiency, and reduce the workload of sorting and closed testing in the later stage. Then through the understanding of the process to achieve domestic replacement and self-development of the core equipment, further reduce the cost of the production line, and finally reduce the loss of time cost and economic cost in the process by the way of IDM integration of the whole process. Finally, it can match the efficiency and cost of the industry chain of silicon devices.

Dr. Shao Chunlin, the chief scientist of Hongjin Semiconductor, shared his history as the earliest research and development and industrialization of gallium nitride technology in China, participated in the development of the earliest MOCVD equipment, and participated in leading the planning and construction and technological innovation of Hongjin Semiconductor. It also demonstrates the autonomous key technical capabilities of Yu Hongjin, such as extremely low epitaxial warping control, uniform GaN layer thickness and precise and controllable carrier control. It also has the technical matrix for epitaxial growth of gallium nitride materials on gallium nitride, silicon, silicon carbide and sapphire substrates, and the full product capabilities of power electronics, laser and display, and radio frequency. It reflects Yu Hongjin's strong positive R & D capability based on KNOW HOW, which can freely choose or even develop new technical routes according to the target demand, and achieve rapid sample preparation and verification until it is introduced into mass production.

▲ honors Hongjin semiconductor core team member

With 85% average yield to obtain high consistency devices, highly integrated IDM-7 day manufacturing cycle, high R & D efficiency to reduce time by 2pm 3, self-developed equipment and equipment localization to reduce costs by 2pm 3, terminal application industry cluster integration, Yu Hongjin realized "industrial efficiency revolution = high quality rate x IDM integration x high R & D efficiency x equipment cost reduction x rapid application verification". The live video of the factory shows the production line of Yu Hongjin with the largest number of equipment and the most complete processes in the industry, and puts forward the concept of Super IDM industrial cluster for the first time, including equipment-material end, independent full-process IDM, sales and technical service system group and terminal product application ecological chain, namely "Super IDM industrial cluster = upstream equipment materials + IDM + terminal technology application + retail service ecological chain". Based on the deep coupling of the industrial cluster, the upstream equipment is autonomous and controllable, the cost is reduced, the IDM link is extremely efficient, and the application terminal is quickly imported and batch verified to achieve the industrial goal of promoting the rapid popularization of the gallium nitride industry.

In the process of product release, Yu Hongjin released the full power band devices from 100V-650V-900~1200V, which can be used in a variety of power electronics fields. Among them, the industry's first gallium nitride SBD device and the physical display of 900V sapphire-based gallium nitride wafers have attracted the attention of the industry. With better device yield and consistency, achieve full scene requirements and advantageous cost coverage with fewer and higher specifications, and promote the overall popularity of gallium nitride devices in a way that takes into account both high performance and low cost. in order to realize Yu Hongjin's industrial ideal of "changing everyone's life with gan semiconductors". This link also released the business and agent investment cooperation intention.

In the process of signing the contract on the spot, Yu Hongjin Semiconductor shared more of its industrial ideals-to set up a benchmark for efficient industrialization, to introduce and train more industry talents for China's semiconductor industry, and to accelerate the industrialization of technology. The International School of Microelectronics of Dongguan Technology, an applied university of top, signed a strategic cooperation agreement on the project of co-building talent training and industrial co-creation platform, and also signed an industrial cooperation strategic agreement on gallium nitride motor R & D and application with "Big Family Robot" of "Dazhong Laser".

Finally, Yu Hongjin team accepted interviews and answers to various questions of concern to the reporter, and interacted with the intended investment team, investment institutions and upstream and downstream cooperation. In the follow-up, Yu Hongjin will launch a media open day and invite you to visit the Fuzhou factory to visit and learn about the IDM production line with the highest yield and the highest efficiency in China.

Yan Huaibao, Chairman of ▲ Hongjin Semiconductor

From the hot number of people at the press conference and the enthusiastic response of the audience, we can see that Yu Hongjin Semiconductor's launch of the gallium nitride (GaN) device brand was a complete success.

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