Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizens Wu Yanzu in South China for the delivery of clues! CTOnews.com October 11 news, Micron issued a press release today, further expanding the 1 β (1-beta) process node technology and introducing 16Gb DDR5 memory.

The 1 β DDR5 DRAM demonstrated by Meguiar is now available to data centers and PC users with a peak speed of 7200 MT/s.

This new DDR5 memory uses advanced high-k CMOS device technology, 4-phase clock and clock synchronization (clock-sync) 1, compared with the previous generation performance improvement of 50%, per watt performance improvement of 33%.

The new 1 β DDR5 DRAM product line provides module density from 4800 MT/s to 7200 MT/s to meet the needs of data center and client applications.

Brian Callaway, vice president of Micron Core Computing Design Engineering Group, stressed the importance of this development, saying: "the mass production and availability of 1 β DDR5 DRAM for client and data center platforms marks an important milestone in the industry. Our cooperation with ecosystem partners and customers will drive the faster adoption of these high-performance memory products."

Meguiar's 1 β technology supports a variety of combinations of memory-based solutions, including DDR5 RDIMM and MCRDIMM using 16Gb, 24Gb and 32Gb DRAM chips, LPDDR5X, HBM3E and GDDR7,16Gb DDR5 memory products using 16Gb and 24Gb DRAM chips will be sold through direct sales and channel partners.

CTOnews.com previously reported that after industry analyst TechInsights dismantled iPhone 15 Pro, it found that Meguiar's latest ultra-high density D1 β (D1b) LPDDR5 16 Gb DRAM chip was used internally, which was the first time in the industry to set foot in D1 β.

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