Shulou(Shulou.com)11/24 Report--

CTOnews.com October 10 news, the flash market, although there is a global economic downturn, high inflation and many other factors, is still in a challenging period, but Meguiar, Samsung and other DRAM giants are actively preparing for 1 γ DRAM technology.

Figure Source: SK Hynix DRAM the world's most advanced DRAM process has developed to the fifth generation, Meguiar calls it 1 β DRAM, while Samsung calls it 1b DRAM.

Meguiar began mass production of 1 β DRAM in October last year, but the goal of research and development is to produce 1 γ DRAM in 2025, which will mark Meguiar's first foray into EUV lithography technology.

Samsung plans to enter the 1b DRAM process in 2023, with chip capacity from 24Gb (3GB) to 32Gb (4GB) and native speed increased from 6.4 to 7.2Gbps.

NAND in the NAND flash memory business, this technology has now exceeded the significant milestone of 200 layers stacking, storage manufacturers continue to pursue higher layers.

SK Hynix unveiled the world's first 321 layer NAND flash memory sample at the 2023 Flash Summit on August 9. This innovation increases efficiency by 59 per cent compared to the previous 238-tier 512Gb NAND. SK Hynix plans to further improve 321 layers of NAND flash memory and plans to start production in the first half of 2025.

In addition, Micron has ambitious plans to go beyond the 232th floor and will soon launch products such as 2YY, 3XX and 4XX. Kioxia and Western Digital are also actively exploring 3D NAND technology with 300,400,500 layers or more.

CTOnews.com previously reported that Samsung plans to launch the ninth generation of 3D NAND in 2024, which may have 280 layers, followed by the tenth generation in 2025-2026, which may reach 430 tiers. Their ultimate goal is to achieve 1000 layers of NAND flash memory by 2030.

Related readings:

"Samsung predicts that NAND with more than 1000 layers will be available in 2030."

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