Shulou(Shulou.com)11/24 Report--

CTOnews.com, September 27 (Xinhua)-- QuInAs Technology, a new non-volatile memory developer in the UK, recently announced that it has acquired and purchased related equipment in the hope of producing 20nm prototype UltraRAM.

CTOnews.com previously reported that UltraRAM is a "super-efficient storage" technology that aims to combine non-volatile flash NAND and volatile memory RAM with energy efficiency and high durability.

QuInAs is currently actively promoting commercial UltraRAM, claiming that the technology can withstand up to 10 million rewrite cycles. After the prototype achieves this goal, the company will conduct a small trial production and seek customers around the world.

UltraRAM, developed by physicists at the University of Lancaster and the University of Warwick in the UK, launched QuInAs Technology last winter to promote commercialization and made its debut at the Flash Summit in August.

The charge stored in the UltraRAM cell can be stored for 1000 years without leakage, promising to be 100 times more energy-efficient than DRAM and 1000 times higher than 3D NAND.

The key to UltraRAM is an innovative three-layer floating valve made of indium arsenide and aluminum antimonide (InAs / AlSb) to ensure maximum energy efficiency and leakage protection.

In the traditional 3D NAND memory, the oxide floating gate in the cell is gradually destroyed, while in the UltraRAM memory, the three-layer gate is almost unaffected by the outside world.

When UltraRAM performs the read operation, it is also completed in a non-destructive way. The electron enters the cell through the triple barrier when it resonates, and exits in the same way during the erase process, which makes the writing process very energy-saving, thus achieving a very long number of rewrite cycles.

In order to continue to develop UltraRAM, the company has received funding from Innovate UK's ICURe Exploit fund, which will help to further promote the commercialization of UltraRAM.

Related readings:

British researchers introduce a new breakthrough in UltraRAM technology: it can integrate memory and flash memory with high durability.

Welcome to subscribe "Shulou Technology Information " to get latest news, interesting things and hot topics in the IT industry, and controls the hottest and latest Internet news, technology news and IT industry trends.