Shulou(Shulou.com)11/24 Report--

CTOnews.com Sept. 12 news, according to South Korea's The Elec report, Samsung Electronics and SK Hynix accelerate the production of 12-tier HBM memory. The explosion of generative AI has driven not only the demand for Nvidia accelerator cards, but also the demand for high-bandwidth memory (HBM). The more layers of HBM are stacked, the stronger the ability to process data. At present, the mainstream HBM stack 8 layers, while the next generation of 12 layers is about to begin mass production.

It is reported that hot pressing bonding (TCB) and batch reflow soldering (MR) processes are mainly used in HBM stacking, while the latest news says that Samsung and SK Hynix are promoting a packaging process called hybrid bonding (Hybrid Bonding), which breaks through the heating and package height restrictions of TCB and MR.

Hybrid in Hybrid Bonding means that in addition to copper bump which is sunken at room temperature to complete bonding, other non-conductive parts of the two Chip face-to-face should also be bonded. Therefore, Hybrid Bonding has no gap between core and core or between wafer and wafer, and does not need to be filled with epoxy resin.

CTOnews.com quoted the media as saying that major companies such as Samsung Electronics and SK Hynix have overcome these challenges and expanded their TCB and MR processes to achieve up to 12 layers.

It is reported that the adoption of the Hybrid Bonding process has significantly improved input / output (IO) throughput, allowing 10, 000 to 100000 through holes (via) to be connected in an area of 1 square millimeter.

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