Shulou(Shulou.com)11/24 Report--

CTOnews.com, Sept. 5, researchers at Tohoku University in Japan recently used sputtering technology to produce niobium telluride (NbTe4) material. It is reported that this material has "excellent storage and thermal properties" and is expected to be used in the manufacture of phase change memory, thus providing the industry with more choices of raw materials and reducing related costs. The paper has been published and archived on the onlinelibrary platform.

CTOnews.com learned that phase change memory (PCM) is a memory technology that "uses phase change materials as storage media". Compared with current flash memory, phase change memory preserves data through solid-state and liquid transition of phase change materials (the writing speed of flash memory is limited by the speed of charge movement), so it has faster reading and writing speed, higher storage density, lower power consumption and smaller size. However, the cost of manufacturing phase change memory media is too high. at present, phase change memory is still in the enterprise stage and has not yet been devolved to the home market.

▲ image source onlinelibrary platform related papers researchers use sputtering technology to make materials, it is reported that "sputtering is a widely used technology, this technology is mainly to deposit the material film on the substrate, so as to achieve accurate control of the thickness and composition of the film." The researchers annealed at temperatures above 272 °C to form niobium telluride (NbTe4) crystals, a material with an ultra-low melting point of about 447 °C, so it is physically stable and suitable for making phase change memories.

▲ image source onlinelibrary platform related paper researchers evaluated the crystal. It is said that compared with traditional phase change memory compounds, niobium telluride (NbTe4) crystal has higher thermal stability, and the crystallization conversion rate to liquid is quite fast (about 30 nanoseconds), highlighting its potential as a raw material for phase change memory.

Shuang, Assistant Professor of Advanced Institute of Materials Science, Northeastern University, said: "We have opened up new possibilities for the development of high-performance phase change memory. NbTe4, with its low melting point, high crystallization temperature and excellent conversion performance, is one of the 'ideal materials' to solve the current cost challenges faced by phase change memory."

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