Shulou(Shulou.com)11/24 Report--

CTOnews.com, September 1 (Xinhua)-- Samsung today announced that it has developed its largest 32Gb DDR5 DRAM with 12nm (nm) process technology, which is twice the capacity of the 16Gb memory module at the same package size.

SangJoon Hwang, executive vice president of the memory development group of Samsung's electronic memory division, said: on the basis of Samsung's newly launched 12nm 32Gb memory, Samsung can develop a solution to implement 1TB memory modules, which will help meet the growing demand for high-capacity DRAM memory in the era of artificial intelligence and big data.

The Samsung 12nm 32Gb DDR5 DRAM products attached to IT House are introduced as follows:

By using newly developed 32Gb memory particles, 128GB memory modules can be produced even without the use of silicon through hole (TSV) process. Compared with 128GB memory modules encapsulated with 16Gb memory, its power consumption is reduced by about 10%. This technological breakthrough makes the product a preferred solution for companies focused on energy efficiency, such as data centers.

Based on the 12nm 32Gb DDR5 DRAM, Samsung plans to continue to expand its high-capacity memory product lineup to meet the growing needs of the high-performance computing and IT industry. By providing 12-nanometer 32Gb memory to data centers and customers using applications such as artificial intelligence and next-generation computing, Samsung hopes to consolidate its position at the forefront of the next-generation memory market. In the future, the product will also play a vital role in the long-term cooperation between Samsung and other core industry partners.

The new 12-nanometer 32Gb DDR5 DRAM is scheduled to start mass production by the end of this year.

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