Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizens Wu Yanzu in South China and Mr. Aviation for their clue delivery! CTOnews.com, August 18, according to DigiTimes, Samsung Electronics plans to produce the 9th generation V-NAND flash memory next year, which will follow a two-tier stack structure with more than 300layers.

This will put Samsung ahead of SK Hynix, which plans to mass-produce 321 layers of NAND flash memory with a three-tier stack architecture in the first half of 2025, the report said. As early as 2020, Samsung introduced the dual stack architecture for the first time to produce the 7th generation V-NAND flash memory chip.

▲ Source Samsung CTOnews.com Note: double stack architecture means to produce a 3D NAND stack on a 300mm wafer, and then build another stack on top of the first stack.

Samsung's upcoming super-300 layer 9 V-NAND will increase the storage density produced on a single wafer, which will help reduce the cost of solid-state drives.

As a competitor, SK Hynix's three-tier stack architecture creates three different sets of 3D NAND layers, which will increase the use of production steps and raw materials in order to maximize production.

According to the Seoul Economic Daily, the industry believes that after the launch of the 9th generation 3D NAND, Samsung is expected to adopt a three-tier stack architecture in the 10th generation of 430-layer 3D NAND. The newspaper quoted industry insiders as saying that if the number of 3D NAND layers exceeds 400, the consumption of raw materials and wafer costs will also rise, while ensuring production.

On the 2022 Samsung Technology Day held in October last year, Samsung put forward a long-term vision: to increase the number of layers to 1000 by 2030.

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