Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com, July 7 (Xinhua)-- A research team from Tokyo Institute of Technology recently developed stackable memory, which is four times faster than HBM2E memory and consumes only 1/5 of power.

The research team calls it BBCube, and the biggest highlight is that it removes the layer-by-layer welded crystal layout of traditional memory.

The research team received peer demonstration at the VLSI IEEE Symposium 2023 conference in June 2023, which not only put forward this new concept, but also described in detail the technical process for producing this kind of memory.

CTOnews.com Note: high bandwidth memory (HBM) is a high performance DRAM based on 3D stack process initiated by Samsung Electronics, Ultra Micro Semiconductor and SK Hynix. It is suitable for applications with high memory bandwidth requirements, such as graphics processors, network switching and forwarding devices.

Existing methods of producing HBM memory limit its function, each layer in the stack (DRAM chip) cannot be made thinner than a particular specification, and the number of ball contacts (ball contacts) between layers cannot be increased by more than a certain value, otherwise there is a risk of mechanical damage and short circuit.

The research team suggested that removing ball contact during DRAM packaging could make the chip thinner, reduce the mechanical stress of each layer, and shorten the through-hole line of TSV.

Professor Takayuki Ohba, head of the research team, said: "BBCube 3D has the potential to achieve 1.6TB per second throughput, 30 times faster than DDR5 and four times faster than HBM2E."

CTOnews.com attaches the detailed address of the paper here, which can be read in depth by interested users.

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