Shulou(Shulou.com)11/24 Report--

CTOnews.com July 3 news, Tianyue advanced with the latest technology of 8-inch silicon carbide substrate was unveiled at the Semicon China exhibition, revealing the latest progress.

CTOnews.com Note: Shanghai Semiconductor Show Semicon is the largest and most influential semiconductor professional exhibition in the world, covering chip design, manufacturing, closed testing, equipment, materials, photovoltaic, display and other industries.

According to the company's Dr. CTO, at present, the company is mainly based on 6-inch conductive silicon carbide substrate, Shanghai Lingang factory has entered the product delivery stage, 8-inch products have the ability of industrialization.

Recently, Dr. Gao Chao, Tianyue advanced liquid phase method to prepare a low-defect 8-inch crystal, through thermal field, solution design and process innovation to break through the silicon carbide single crystal high-quality growth interface control and defect control problems, is still the first in the industry. In addition to the product size, the crystal thickness prepared by the company's latest technology has exceeded 60mm in terms of efficient preparation of large-size single crystals.

It is understood that 6-inch silicon carbide wafers are still the mainstream products in the market, and 8-inch substrates are becoming the direction of technological evolution. Wolfspeed, ROHM, Infineon and other major international factories have been laid out successively. The 8-inch area increases by about 78% over the 6-inch area, and the number of chips cut from the 8-inch substrate will increase by nearly 90% under the same conditions, reducing the unit overall cost by 50%.

In May this year, Tianyue Advanced signed a new wafer and ingot supply agreement with Infineon to supply silicon carbide 6-inch substrates and cooperate to prepare 8-inch substrates.

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