Shulou(Shulou.com)11/24 Report--

CTOnews.com, May 19, according to Nikkei Asia, Renesas announced today that it will enter SiC power semiconductors, which is expected to be produced at the Takazaki plant in Gunma Prefecture, Japan.

▲ government factory, picture source: Renesa official website Renesa president Shibata Yingli said that although Renesas later entered the SiC power semiconductor market, but before Renesas in the silicon-based IGBT field is also a late investment, now the product performance has been affirmed by the market, SiC power semiconductors are also expected to reengrave the IGBT field of the way. He also pointed out that after Renesas entered into SiC power semiconductors, Japan's market share in SiC power semiconductors is expected to further increase.

CTOnews.com consulted the relevant research report and learned that the market size of SiC power semiconductors in 2021 is as high as 140 billion yen (CTOnews.com Note: currently about 7.126 billion yuan), and is expected to expand to 3.4 trillion yen (currently about 173.06 billion yuan) by 2030. At present, the main players in this field include Mitsubishi Electric, Roma Semiconductor, Italian Semiconductor and Infineon. Renesas pointed out in the financial report that the strong consumption of electric cars from China, Europe and other regions has pushed up the demand for power semiconductors such as SiC and IGBT.

In addition, Renesa decided to reopen the Yamanashi Jiafu plant, which was closed in 2014 to produce IGBT, and has completed an investment in production equipment for the 12-inch wafer production line, which is expected to be mass produced in the first half of 2024. Renesa said that Renesas already has a 10 per cent share in the field of IBGT for electric vehicles, and the Jiafu factory is expected to further expand its market share when it goes into production.

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