Shulou(Shulou.com)11/24 Report--

Thank you, CTOnews.com netizens. Hello, rabbit, delivery of clues from Daniel Wu in South China! CTOnews.com May 10 news, the United States-based 3D NAND flash memory manufacturer Neo Semiconductor recently launched 3D X-DRAM memory chip, claiming to be the world's first DRAM similar to 3D NAND, its capacity significantly exceeds the current 2D DRAM solution.

The first version of 3D X-DRAM storage implements 128Gb with 230layers per chip, which is eight times denser than the current 2D DRAM chip.

Neo Semiconductor believes that this solution can be expanded more easily and cost less to implement than other 3D DRAM alternatives, making it a reliable candidate to replace 2D DRAM in the near future.

The core of 3D X-DRAM technology lies in the innovative use of floating body unit (FBC). Using the mature 3D NAND technology, only a mask (mask) is needed to define the bit line hole and form the unit structure in the hole. This method can greatly simplify the production, implementation and transition of 2D DRAM.

According to Neo Semiconductor's estimates, storage capacity could double to 256 Gb by 2025, with 1 Tb available within a decade. More information will be released at the Flash Summit on August 9, 2023.

CTOnews.com is enclosing an official introduction link to 3D X-DRAM, which can be read by interested users.

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