Shulou(Shulou.com)11/24 Report--

CTOnews.com April 20 news, SK Hynix official website announced that once again beyond the existing highest performance DRAM (memory)-HBM3 technical boundaries, the world's first time to achieve vertical stacking of 12 single DRAM chips, the successful development of the highest capacity 24GB HBM3 DRAM new product. The company said it is currently providing samples to customers and conducting performance evaluation.

SK Hynix said: "after taking the lead in the industry's first HBM3 in June last year, the company has successfully developed a 24GB package product with a 50 per cent increase in memory capacity compared with the previous generation. We will supply new products to the market in the second half of the year to meet the demand for high-end memory products driven by the AI chat robot industry."

Through the application of advanced batch reflux molding filling (MR-MUF) technology, SK Hynix engineers improve the process efficiency and performance stability of new products, and through silicon through hole (TSV) technology, the thickness of a single DRAM chip is reduced by 40%, reaching the same stacking height as 16GB products.

HBM is a kind of memory first developed by SK Hynix in 2013. Because it plays a vital role in implementing AI running in high performance computing (HPC) systems, it has been widely concerned by the memory chip industry. The latest HBM3 standard is particularly considered an ideal product for fast processing of large amounts of data, so it is increasingly adopted by major technology companies around the world.

SK Hynix has provided samples of 24GB HBM3 products to a number of customers who have expressed great expectations for the latest products, and the performance evaluation of the products is also under way.

"SK Hynix continues to develop a range of ultra-high-speed and high-capacity HBM products because it uses leading technology in back-end processes," said Hong Xianghou, head of SK Hynix's packaging and testing department. "the company plans to complete mass production preparations for new products in the first half of this year to further consolidate its leading position in the cutting-edge DRAM market in the AI era."

CTOnews.com Note: HBM (High Bandwidth Memory) is a kind of high-value, high-performance memory. By vertically connecting multiple DRAM chips, it greatly improves the data processing speed compared with traditional DRAM products. HBM DRAM products are developed in the order of HBM (first generation), HBM2 (second generation), HBM2E (third generation) and HBM3 (fourth generation). The maximum capacity of the existing HBM3 DRAM is the 16GB with 8 individual DRAM chips stacked vertically.

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