Shulou(Shulou.com)11/24 Report--

CTOnews.com April 14 news, Hongqi Research and Development Institute of New Energy Development Institute Power Electronics Development Department and China Electronic Technology Group 55 Research Institute jointly developed the first FAW 750V silicon carbide power chip for electric drive recently completed the sample flow, officially entered the product-level testing stage.

750V silicon carbide power chip

The power chip mounting process verifies that silicon carbide technology is one of the core driving forces for the development of new energy electric drive systems. In the next five years, the compound annual growth rate of silicon carbide power modules for vehicles will reach 38.3 percent, and the market size will reach US $4.413 billion (CTOnews.com Note: currently about 30.317 billion yuan). As the core device of the power module of the electric drive system, the silicon carbide power chip is still monopolized by foreign chip companies, which has become a key bottleneck restricting the rapid development of new energy vehicles in our country.

Hongqi Power Electronics Development Department relies on the rich experience in electric drive system development and application, leads the definition of technical requirements for 750V silicon carbide power chip products, and jointly conducts technical research on structural design, process technology, and material application dimensions, with the chip specific on-resistance of 2.15m Ω cm ²and the maximum working junction temperature of 175 ℃, reaching the international advanced level.

The cellular modeling and structure optimization design of planar gate silicon carbide chip are completed by the combination of finite element simulation and process experiment. Optimize the structural parameters of the JFET region to achieve the best balance between the conduction and blocking performance of the chip; optimize the terminal structure to improve the terminal protection efficiency and improve the voltage withstand capacity of the device.

A stable silicon carbide wafer process is established, the substrate resistance is effectively reduced by substrate thinning and laser annealing, and the interface state density is reduced by gate dielectric oxidation and nitriding after oxidation. Nitric oxide annealing process parameters optimization and reliability verification are completed, and the channel mobility and threshold voltage stability are improved.

The domestic low defect substrate material and high uniformity epitaxial material are used to further reduce the failure probability of silicon carbide power chip and improve the reliability of the chip, and the surface metal layer material which can support silver sintering process is applied to greatly improve the heat dissipation effect of the chip. can support stable and safe work at high temperature.

Schematic diagram of plane grid cell structure

Simulation diagram of electric field distribution

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