Shulou(Shulou.com)11/24 Report--

Thank you, Mr. Air, a netizen of CTOnews.com, for your clue delivery! CTOnews.com, April 6, according to the official release of Red Flag, the first national power drive 1200V plastic encapsulated silicon carbide power module A sample developed by the Power Electronics Development Department of the New Energy Development Institute of the General Research and Development Institute and the 55th Research Institute of China Electronic Technology Group has been trial-produced, achieving fully autonomous design and production of silicon carbide power semiconductors for electric drive, and national production, breaking the international chip monopoly.

1200V silicon carbide wafer

Plastic encapsulated 2in1 power module A sample rate semiconductors have become the core path to achieve industry-leading new energy electric drive systems because of their material advantages such as high voltage resistance, low loss, high temperature resistance and high frequency.

With the application of high density and high reliable cellular structure, chip current enhancement technology, high reliable silicon carbide gate oxide preparation technology, fine structure processing technology, etc., the specific on-resistance of silicon carbide chip reaches 3.15m Ω cm2, the conduction current reaches 120A, and the technical index reaches the international advanced level. (CTOnews.com Note: the turn-on resistance refers to the ratio of the voltage at both ends of the diode to the on-current after the diode is turned on, which is an important parameter of the diode. )

Innovative application of industry-leading three-terminal bus laminated structure, highly reliable copper wire interconnection technology and high heat dissipation oval PinFin cooling channel, combined with large-size epoxy resin mold turning plastic packaging and high temperature-resistant silver sintering chip mounting process to achieve module parasitic inductance ≤ 6.5nH, module continuous working junction temperature 175 ℃, output current effective value up to 550A.

Thermal Simulation Diagram of ▲ Power Module

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