Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizens kinja and soft media users 1747544 for their clue delivery! CTOnews.com, March 19, according to the official news of the Physics Department of Xiamen University, Xiamen University has successfully achieved 8-inch (200 mm) homoepitaxial growth of silicon carbide (SiC), becoming the first institution in China to own and implement this technology.

According to reports, as one of the main representatives of the third generation semiconductors, silicon carbide has wider band gap, higher breakdown electric field and higher thermal conductivity than silicon, and it performs well in the fields of high temperature, high voltage and high frequency. Power electronic devices based on silicon carbide have been widely used in aerospace, new energy vehicles, rail transit, photovoltaic power generation, smart grid and other fields.

At present, the mainstream silicon carbide single crystal and epitaxial growth is still in the 6-inch stage, and expanding the size has become the main path for the industrial chain to reduce cost and increase efficiency. However, there are still many technical problems in the process of moving towards 8 inches.

The head of the scientific research team of Xiamen University said that the homoepitaxial growth of silicon carbide based on domestic substrate was successfully realized by overcoming the problems such as greater stress of 8-inch substrate, easier to crack and more difficult to control the thickness uniformity of epitaxial layer. The thickness of the epitaxial layer is 12 um, the thickness non-uniformity is 2.3%, the doping concentration is 8.4 × 10 / cm, the doping concentration non-uniformity is less than 7.5%, and the density of surface defects (Carrot, Triangle, Downfall, Scratch) is less than 0.5 cm.

The person in charge of the above scientific research team said that this breakthrough indicates that China has mastered the relevant technology of 8-inch silicon carbide epitaxial growth. The realization of this technology is the result of industry-university-research cooperation between Xiamen University and Hantiancheng Electronic Technology (Xiamen) Co., Ltd., which will inject new impetus into the development of China's silicon carbide industry and promote the development of new energy and other related fields.

According to CTOnews.com, Xiamen University Physics, which was founded in 1923, is one of the earliest physics disciplines in Chinese universities and has played an important role in the history of physics development in China. Xiamen University Physics participated in China's first five-school joint semiconductor specialization; developed China's first conductive glass, the first transistor radio, and the first gallium phosphide planar light-emitting diode.

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