Shulou(Shulou.com)11/24 Report--

CTOnews.com March 16 news, Geely Technology Zhejiang Jingneng Microelectronics recently announced that its independent design and development of the first car specification-level IGBT products successfully. All the parameters of the new chip meet the design requirements.

Jingneng independently developed IGBT wafer wafers this IGBT chip uses the seventh generation of micro-groove gate and field cut-off technology, through the optimization of surface structure and FS structure, both short-circuit tolerance and lower turn-on / switching loss are achieved, the power density increases by about 35%, and the comprehensive performance index reaches the industry-leading level. The wafer can be deeply bound to the wafer generation factory, and the process co-creation is adopted to continuously improve the performance of the chip.

Jingneng said that a typical new energy vehicle uses more than 1200 chips. The proportion of power semiconductors is close to 1 pound 4. The company will continue to develop superior chip and module products around the development needs of the powertrain system.

Crystal energy independent research and development of IGBT HP Drive module IGBT is the leading device in modern power electronics, known as the CPU in the power electronics industry. Recently, some industry developers have discussed the solution of packaging Si IGBT and SiC MOS together to form hybrid parallel modules. In the future, the innovative application scenarios of power chips and modules will be more abundant.

Crystal Energy Microelectronics is a power semiconductor company incubated by Geely Technology Group, focusing on the research and innovation of Si IGBT&SiC MOS, giving full play to the comprehensive capability of "chip design + module manufacturing + vehicle specification certification" to provide superior power products and services for new energy vehicles, electric motorcycles, photovoltaic, energy storage, new energy ships and other customers.

CTOnews.com Note:

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a compound fully controlled voltage-driven power semiconductor device composed of (Bipolar Junction Transistor,BJT) bipolar transistor and insulated gate field effect transistor (Metal Oxide Semiconductor,MOS). It has both the advantages of high input impedance of (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) metal-oxide half-field effect transistor and low conduction voltage drop of power transistor (Giant Transistor,GTR). GTR has the advantages of low saturation voltage, high current density and high driving current, while the driving power of MOSFET is very small and the switching speed is fast, but the conduction voltage drop is large and the current density is low. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for converter systems with DC voltage of 600V or above, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and so on.

IGBT is the core device of energy transformation and transmission, commonly known as "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment and other fields.

IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (continuous current diode chip) through a specific circuit. The packaged IGBT module is directly used in frequency converter, UPS uninterruptible power supply and other equipment.

IGBT module has the characteristics of energy saving, convenient installation and maintenance, heat dissipation and stability; at present, most of the products sold in the market are such modular products, and the so-called IGBT also refers to IGBT module; with the promotion of the concept of energy saving and environmental protection, such products will be more and more in the market.

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