Shulou(Shulou.com)11/24 Report--

CTOnews.com, according to the Semiconductor Institute of the Chinese Academy of Sciences, Mr. Wang Wei, academician of the Chinese Academy of Sciences, researcher of the Semiconductor Research Institute of the Chinese Academy of Sciences, and China's famous semiconductor optoelectronist, died at 18:11 on January 26, 2023 in Beijing at the age of 86.

Academician Wang Wei was born in Wen'an, Hebei Province on December 25, 1937. He graduated from the Department of Physics of Peking University in 1960 and worked at the Semiconductor Research Institute of the Chinese Academy of Sciences in the same year. He is a famous expert in semiconductor optoelectronics in China, and has made important contributions to the construction of semiconductor discipline, technological innovation, industrial revitalization and personnel training in China. CTOnews.com learned that Academician Wang Wei has successively won the National sixth five-year Plan Award for tackling key problems, the first prize for scientific and technological progress of the Chinese Academy of Sciences, the second prize for national scientific and technological progress, and the first prize for science and technology of the China Society for Materials Research. He was elected as an academician of the Chinese Academy of Sciences in 1997.

Academician Wang Wei has worked hard and made profound attainments in the field of semiconductor optoelectronics, and has made a series of important scientific research achievements. In the 1960s, the dislocation-free silicon single crystal was first developed in China, which contributed to the development of silicon planar transistors and integrated circuits in China. In 1970s, single heterojunction room temperature pulse high power laser and surface emitting high brightness light emitting tube were successfully developed in China, and successfully applied to night vision, fuze, target shooting and precision rangefinder. participated in the establishment of the first batch of Ⅲ-V compound liquid phase epitaxy methods, laying the foundation for the first successful development of GaAs-based short-wavelength pulse laser in China. 1.3 μ m / 1.5 μ m lasers and strained quantum well dynamic single mode distributed feedback lasers were developed from 1980s to 1990s, which provide much-needed light sources for the research and development of the second and third generation long-distance high-capacity optical fiber communications in China. Since the beginning of the new century, he has presided over the research of key technologies such as large strain quantum well materials and monolithic integration of different bandgap quantum well materials. an integrated technology platform which can integrate semiconductor lasers, electroabsorption modulators, optical amplifiers, detectors and couplers has been established, which lays a foundation for the monolithic integration of multiple optical components.

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