Shulou(Shulou.com)11/24 Report--

CTOnews.com January 19 news, according to DIGITIMES research report, with the gallium nitride (GaN) communication components in the process and epitaxial technology continue to improve, will be from the current better heat dissipation silicon carbide-based gallium nitride (GaN on SiC) structure, towards the upcoming trial production of GaN on GaN and epitaxial quality improved silicon gallium nitride (GaN on Si) architecture development, to support the subsequent 6G network communication in low-orbit satellites and smart phones and other scene applications. Moreover, as 6G networks will integrate cloud and edge computing capabilities of 4G and 5G communications and provide broader 6G network bands, data transmission rates and transmission ranges, it is also expected to boost the terminal demand of GaN communication devices in high frequency and high power environments. (Epitaxy refers to a technique used in semiconductor device manufacturing to grow new crystals on existing wafers to make new semiconductor layers)

Due to the continuous upgrading of communication network technology, from the original simple voice transmission 2G to the current complex Internet of Things 5G, and then to the future integration of multi-sensor 6G network, will provide people with more convenient communication life. 6G networks are better than 5G in terms of spectral efficiency, communication energy efficiency and data transmission rate, and 6G has a wider network frequency band and can support non-terrestrial communication (NTN), which is expected to increase the penetration ratio of GaN communication components in the 6G network ecosystem.

CTOnews.com understands that GaN communication components are suitable for harsh operating environments such as power amplifiers (PA) in base stations due to their high frequency and high power material characteristics. GaN on SiC heteroepitaxial structure with better heat dissipation condition is the main structure of current GaN communication devices. DIGITIMES Research believes that in the future, with the continuous advent of homogeneous GaN-on-GaN components and the improvement of GaN on Si epitaxial quality, it will gradually be applied to terminal scenarios such as 6G network communication in low-orbit satellites and smart phones.

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