Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com, January 9, according to South Korean media The Elec, Samsung will speed up the stacking process of 3D NAND and is talking about jumping the stack number of the 10th generation V-NAND expected to be produced in 2025-2026 to 430 levels.

Samsung has previously announced that it will develop 1000 layers of V-NAND flash memory by 2030, and the outline of the next-generation V-NAND roadmap has gradually surfaced.

According to reports, Samsung plans to mass-produce the ninth-generation V-NAND in 2024 within the range of 280 layers of 3D NAND. For the tenth generation of the V-NAND, scheduled for mass production in 2025-2026, Samsung is talking about skipping the 300th floor and going straight to the 430th floor.

According to the analysis, the specific work is gradually advancing in accordance with the goal of developing 1000-tier V-NAND by 2030. It is also observed that the implementation of the "super gap strategy" emphasized by Samsung Chairman Lee Jae-yong is accelerating.

In addition, industry insiders revealed that Samsung has developed a rough roadmap for the number of V-NAND units such as the ninth and tenth generation, and is developing products from many angles.

CTOnews.com learned that V-NAND was Samsung's first flash technology in 2013, connecting each layer by drilling holes in the three-dimensional space of vertically stacked flat layers.

The first generation of V-NAND that appeared in 2013 was layer 24. Since then, there are 32 layers of the second generation, 48 layers of the third generation, 64 layers of the fourth generation, 92 layers of the fifth generation, 128 layers of the sixth generation, and 176 layers of the seventh generation. Each generation has experienced about one year to one year and six months of mass production.

Samsung announced mass production of the eighth generation V-NAND in November 2022, with 236 stacked layers. According to reports, the eighth generation of V-NAND can provide 1Tb (128GB) solution. Samsung Electronics does not disclose the size and actual density of IC, but they call it the highest bit density in the industry.

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