Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com January 2 news, Intel actually started as a DRAM memory, and once became a pioneer in storage semiconductor technology, and successfully created the world's first commercial 1K Bit pMOS DRAM "Intel 1103" in 1970, but announced its withdrawal from this field in 1984 with the rise of Japanese manufacturers.

Although it no longer develops DRAM technology, Intel is not completely separated from storage technology. For example, the company later announced on IDF 2015 that it had partnered with Micron to develop 3D XPoint technology, put its energy into NAND Flash, and developed Optane Aoteng hard drive, but sold the related business in a few years.

CTOnews.com found that Intel Federal LLC, an Intel subsidiary, was commissioned by the U.S. Department of Energy to develop a new memory technology for Sandia National Laboratory. According to reports, this technology is part of the advanced memory technology of AMT in the United States, which is mainly used in the field of supercomputing and aims to accelerate simulation and computing applications.

There is no clear information on the new DRAM technology, but several technologies have been selected and appear to be 40 times more powerful than the NNSA supercomputer to be launched at Sandia Labs.

According to reports, the project is funded by the Advanced Simulation and Computing Program of the US National Nuclear Security Administration, cooperates with Sandia, Los Alamos and Lawrence Livermore, and is part of the investment portfolio of the 10 billion sub-computing plan after NNSA. Its goal is to maintain the momentum of technology research and development and to work closely with the industry through its PathForward program to improve the industrial competitiveness of the United States in the next generation of high-performance computing technology, and to cultivate a stronger domestic high-performance computing ecosystem.

James H. Laros III, head of the Sandia project, said: "this work will focus on improving the bandwidth and latency characteristics of future memory systems, which will have a direct impact on the application performance of various ASC task codes."

"We are already anticipating the future platform challenges that the next generation must address," said Anil Rao, vice president and general manager of Intel Systems Architecture and Engineering Group. "We believe the advanced memory technology program will help us support innovation in the next decade."

"We are rethinking the way DRAM is organized and the basic aspects of how it integrates with computing platforms to achieve breakthrough performance," said Intel Academician Josh Fryman. "We intend to fundamentally advance the architecture of computer systems by studying the thorniest questions raised by scientists at Sandia, Lawrence Livermore and Los Alamos National Laboratories. Mainstream memory is not designed for today's computing platforms, and this multi-year effort will help us get an order of magnitude of performance improvement from the basic DRAM design itself, thereby achieving new levels of performance in all industry areas. We would like to see these innovations incorporated into industry standards to enhance the entire ecosystem. "

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