Shulou(Shulou.com)11/24 Report--

CTOnews.com, December 22, according to DIGITIMES, although the consumer electronics terminal market in 2022 is full of uncertainties such as inventory adjustment, the demand for power electronics semiconductors will be more and more widely used in the automotive and server fields in the future, continuing to promote the demand for the third type of semiconductors such as silicon carbide (SiC) and gallium nitride (GaN).

IDM leaders, including Rohm, Onsemi, Infineon, STM, Wolfspeed, etc., will pull the front of compound semiconductors from the mainstream 6-inch to 8-inch fab, and a new wave of war in pursuit of cost, capacity and efficiency is gradually brewing.

Recently, the major IDM operators compound semiconductors have entered the field of automotive and server electrification one after another. For example, the fourth generation of Roma SiC MOSFET and gate-driven IC have officially entered the Japanese automotive supply chain such as Hitachi Anstemo, which is used in electric vehicle (EV) inverters.

In fact, Roma has been mass-producing SiC MOSFET since 2010, reducing power consumption by 6% compared to mainstream silicon-based IGBT, helping EV continue its mileage.

The relevant industry said that at present, automotive power semiconductors are still relatively tight in supply and demand, and Taiwan diode manufacturers are all actively increasing the proportion of automotive and industrial control products. Taiwan power components manufacturers include Qiang Mao, Taiwan half, Dewei, and so on.

The industry said that the third type of semiconductors with E-wide band gap (WBG) because of their high power density characteristics help to build a higher efficiency, smaller and lighter EV electric powertrain system. The main application area of SiC is in the core automotive inverter.

CTOnews.com learned that as for GaN charging components, which can start from a mature silicon-based process, silicon-based gallium nitride (GaN-on-Si) will be the most likely technology to quickly magnify to 8 inches or even 12 inches. in addition to the large-scale advance of IDM leaders, the world's advanced GaN-on-QST technology in Taiwan wafer foundry has also been gradually completed.

IC agents said that the rapid growth of public and private clouds, as well as the massive construction of data centers, have a higher demand for server power performance, and GaN components with high power density have become one of the preferred solutions for server power supply.

For example, on Senmei joined hands with IC to launch a 500W server power supply scheme, which uses GaN components.

Upstream Lei chip manufacturer IQE 8-inch compound semiconductor chip has been mass production, the follow-up does not rule out a further 12-inch advance, IQECEOAmerico Lemos believes that "compound semiconductors will move from niche to mainstream."

The synchronous advance of GaN and SiC to 8 inches is already a future trend. In the 8-inch factory layout concerned by people from all walks of life, Roma, Wolfspeed, II-VI, Italy and France are all actively under way. It is worth mentioning that looking at the views of supply chain and terminal system factories, people from all walks of life usually ask when the "price strategy" will be as cost-effective as silicon-based semiconductors.

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