Shulou(Shulou.com)11/24 Report--

CTOnews.com December 15 news, According to the electric science equipment release, Electric science equipment 48 third generation semiconductor equipment research and development has made a major breakthrough, Led the application of "Large size ultra-high vacuum molecular beam epitaxy technology and equipment" Project, Won the Ministry of Science and Technology "High performance manufacturing technology and major equipment" Key special project.

Molecular beam epitaxy (MBE) equipment is the core "mother machine" of advanced materials and chip manufacturing. Based on the needs of the country, the trend of the industry, the ability of the electric science institute, focusing on the "three-beam" technology of ion beam, molecular beam and electron beam, the 48 Institute has continuously promoted the R & D and industrialization of the core technology of semiconductor equipment. It has successively developed single 4-inch and 6-inch models and realized their application, laying a solid technical foundation for the development of large size MBE equipment.

The project will be jointly tackled by 48 universities, research institutes and professional companies in the United Nations. By taking advantage of the technological advantages of 48 universities, the project will give full play to the role of the National Third Generation Semiconductor Technology Innovation Center (Hunan) platform, strive to break through a number of key core technologies and process problems, and provide strong support for the leapfrog development of MBE technology and equipment in China.

CTOnews.com learned that in addition, the project of "Key Technologies and Equipment for Ultra-thin Interface Heterogeneous Wafer Bonding" led by Electric Science and Technology Equipment Institute 2 was awarded the key special project of "High-performance Manufacturing Technology and Major Equipment" by the Ministry of Science and Technology.

In response to the urgent demand for a new generation of semiconductor devices in the fields of communication and new energy, the project will be jointly tackled by two institutions as the leading units, a number of domestic universities, research institutes and professional companies. With the National Third Generation Semiconductor Technology Innovation Center as the link, the project will be promoted and implemented according to the four-in-one research and development idea of "bonding mechanism research, core component development, complete machine research and development and device application", which will effectively reduce bonding interface thermal resistance, improve interconnection bonding accuracy and solve technical bottlenecks. Improve device performance.

The project of "Key Technologies and Equipment for Ultra-thin Interface Heterogeneous Wafer Bonding" is another important node for 2 to tackle the basic problems restricting the improvement of core scientific and technological capabilities on the basis of building "National Heavy Weapon_Wafer Bonding Equipment." The project will provide strong support for the rapid development of semiconductor equipment field in China.

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