Shulou(Shulou.com)11/24 Report--

CTOnews.com December 12 news, Guoxing Optoelectronics Research Institute based on wide bandgap semiconductor silicon carbide technology, a new launch of "NS 62m SiC MOSFET power module new", can be applied to traditional industrial control, energy storage inverter, UPS, charging pile, rail transit and other power conversion fields.

Facing the energy storage inverter market, the new power module of Guoxing Optoelectronics NS62m relies on the performance of SiC MOSFET chips to improve the current density and switching frequency of power modules, reduce switching losses and conduction losses, reduce the use of passive devices and the size of cooling devices, and finally achieve the purpose of reducing system cost and improving system efficiency.

Guoxing Optoelectronics NS62m power module adopts standard package, half-bridge topology design, built-in NTC thermistor, which can realize temperature monitoring; adopts 62mm size standard substrate and interface, which can be compatible with major mainstream products in the industry for rapid replacement; it has continuous working temperature (Tvjop) of 150℃ and excellent temperature cycling capability, and the reliability of the device is excellent.

The NS62m power module is used in inverter with half-bridge circuit structure. In practical applications, two or three NS62m power modules are generally connected in parallel to form a single-phase full-bridge topology or a three-phase bridge topology, which converts DC power into AC power with adjustable frequency and amplitude to achieve inverter function. Body diodes based on SiC MOSFETs in NS62m power modules have excellent switching characteristics and reverse recovery performance, so they can meet freewheeling requirements in most scenarios without additional diode devices.

As shown in the orange block diagram, each block diagram represents an NS62m power module. This figure shows that two NS62m power modules are connected in parallel to form a single-phase full-bridge topology.

The NS62m power module can achieve higher switching frequency and lower switching loss during operation, and at the same time, it can help improve the efficiency of the converter system and reduce the cost of the heat dissipation structure.

CTOnews.com has learned that experimental data shows that the NS62m power module dynamic characteristics have a 79 nanosecond reduction in turn-on delay time, a 42 nanosecond reduction in rise-time and a 468 nanosecond reduction in turn-off delay time compared to products with equivalent current specifications on the market. The turn-on loss is reduced by 82%, the turn-off loss is reduced by 92%, and the overall switching loss performance is excellent.

For the needs of traditional industrial control, energy storage inverter, charging pile and other application fields, Guoxing Optoelectronics NS 62m SiC MOSFET module series has a wide range of models to choose from. Relying on the advanced third-generation semiconductor device production line of Guoxing Optoelectronics, the company can respond to the customized development requirements of SiC power modules with different packages and specifications, and provide customers with high-quality customized products and services.

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