Shulou(Shulou.com)11/24 Report--

CTOnews.com, December 11 (Xinhua)-- Park Byung-Jae, a senior researcher in Samsung Electronics' Foundry contract manufacturing department, delivered a speech at the 2022 Semiconductor EUV Global ecosystem Conference on Thursday.

He said that by 2026, the global contract manufacturing market for 3-nanometer process nodes will reach US $24.2 billion, an increase of more than 20 times compared with US $1.2 billion this year.

At present, Samsung Electronics is the only company that has announced the success of mass production of 3nm chips. with the introduction of EUV equipment by Samsung Electronics, TSMC, Intel and other large semiconductor companies, and the continuous development of process technology, it is expected that 3nm process will become a key competitive node.

According to Gartner data, by the end of this year, 5nm and 7nm processes account for the largest share of the wafer foundry market, with a market size of US $36.9 billion, which will be gradually replaced by 3nm in the future. "with the introduction of the 14nm FinFET process, Samsung Electronics has risen to the second place in the contract manufacturing market," he said.

It is said that the 3nm node needs a new device structure to improve performance. Samsung, which is the first to realize mass production 3nm process, uses MBCFET technology with ring gate (GAA) transistor structure, which is significantly better than FinFET performance and power consumption.

"in the case of FinFET, performance increases with the number of pins, but the increase in power consumption outweighs the performance improvement," he says. "on the other hand, MBCFET is much more efficient because they improve performance and power at similar levels."

Specifically, in FinFET technology, the performance is improved by 1.3x, but the power consumption is also increased by 2.2x. In MBCFET, when the performance is increased by 1.7x, the power consumption is only 1.6x, which is relatively more efficient.

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