Shulou(Shulou.com)11/24 Report--

Thanks to CTOnews.com netizens pigeon for delivering the clues of Yong Zhi! CTOnews.com December 9 news, Beijing Ming Gallium Semiconductor Co., Ltd. recently used the guided mode method to successfully prepare a high-quality 4-inch (001) main surface gallium oxide (β-Ga2O3) single crystal, completed a 4-inch gallium oxide wafer substrate technology breakthrough, and carried out a number of repetitive experiments, becoming the first domestic industrialization company to master the fourth generation semiconductor gallium oxide 4-inch (001) phase single crystal substrate growth technology.

According to the test and analysis of the wafer, its crystallization quality and processing technology are also kept in the product grade standard. Laue test shows that the diffraction spots are clear and symmetrical, indicating that the crystal has good monocrystallinity and no twins. The full width at half maximum of the plane (001) shown by XRD is as low as 72arcsec, and the surface roughness AFM (Rq) of the machined wafer is as low as 0.5nm.

Figure: single crystal wafer RMS:0.490nm

Figure: FWHM of the rocking curve of the wafer: 72arcsec steady-state gallium oxide crystal is monoclinic and has two cleavage planes: (100) and (001). As far as the growth process is concerned, the growth process of gallium oxide crystal with (100) crystal is easier, but the growth process of (001) crystal requires very high process control. as far as the processing process is concerned, the surface quality and yield of (001) surface are better under the same processing conditions. The (100) surface is easy to cleavage and break, so it is difficult to realize high efficiency and high surface quality processing. From the point of view of the application side, the main plane (001) crystal phase gallium oxide is more suitable for the use of power semiconductor devices, so it is difficult to control the growth of the main plane (001) crystal phase gallium oxide crystal, but it is of great industrialization value. in other words, without the growth process of large-size main plane (001) crystal phase gallium oxide crystals, it will be very difficult to promote the application end of gallium oxide market.

At the same time, the optical crystal of Ming Gallium Company has completed the pilot test and began to transform into large-scale mass production, and its doped artificial optical crystal has been widely recognized by customers. in addition, the production line of indium phosphide polycrystal material has also been put into operation to complete the certification of key customers and obtain long-term stability orders.

CTOnews.com learned that Beijing Mingga Semiconductor Co., Ltd. is one of the pioneers in the industrialization of new high-frequency and high-power semiconductor materials, committed to the diversified development of the semiconductor artificial crystal industry, and engaged in the design, R & D and industrialization of related high-frequency and high-power devices. R & D headquarters is located in Shunyi, Beijing, the main production base is located in Henan, device R & D is located in Shenzhen, the company has a total area of more than 20000 square meters of complete material R & D and production line.

At the end of June this year, Ming Gallium Semiconductor completed nearly 100 million yuan A round of financing, this round of financing is mainly used for gallium oxide project expansion and research and development. It is expected that the first gallium oxide industry line integrating crystal growth, crystal processing and film epitaxy will be completed by the end of 2023. In 2021, 2-inch gallium oxide substrate materials will be produced in small batches, which will not only be developed by scientific research institutes, but also provided to important enterprise customers for small batch use.

The core members of Mingga Semiconductor's international R & D industry team include a number of doctoral R & D teams from Japan's National Saga University, University of Tokyo, Tokyo University of Technology, Tsinghua University, Kyushu University, Chinese Academy of Sciences and so on. as well as Lou Xiao Technology, SMIC and other general supervisor-type industrial and technical personnel with more than 10 years of work experience, with nearly 100 employees.

Ming Gallium Semiconductor developed independently, an innovative R & D base has been built for gallium oxide single crystal growth, gallium oxide heteroepitaxial wafer growth, multi-doped large-size artificial optical crystal growth, indium phosphide polycrystal / single crystal growth, crystal processing, chip device system fabrication and testing, and finished scale production. It provides upstream material guarantee for research institutions and enterprises engaged in the development of back-end devices of high-frequency and high-power semiconductor materials.

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