Shulou(Shulou.com)11/24 Report--

CTOnews.com, December 8, SK announced on its website today that it has successfully developed a sample of DDR5 multi-channel merged array dual in-line memory module, which is currently the fastest server DRAM product in the industry. The lowest data transfer rate of this product is also as high as 8Gbps, which is more than 80% higher than the current DDR5 product 4.8Gbps.

Officials say the MCR DIMM product uses a whole new approach to improve the transmission speed of the DDR5. Although it is generally believed that the speed of the DDR5 depends on the speed of a single DRAM chip, SK Hynix engineers took a different approach in developing the product, increasing the speed of the module rather than the speed of a single DRAM chip.

The SK Hynix technical team designs products based on Intel MCR technology, using data buffers (data buffer) installed on MCR DIMM to run two memory columns at the same time.

The traditional DRAM module can only transfer 64 bytes of data to CPU at a time, while in the MCR DIMM module, two memory columns run at the same time can transfer 128 bytes of data to CPU. Each increase in the amount of data transferred to CPU increases the data transmission speed to more than 8Gbps, which is twice as fast as that of a single DRAM.

The successful development of this product benefits from the cooperation with Intel and Renesas Electronics. The three companies have worked closely together at all stages from development to speed and performance verification.

Yoo Cheng-soo, vice president of SK Hynix DRAM product planning, believes that the successful development of this product depends on the combination of different technologies. "SK Hynix's DRAM module design capabilities are integrated with Intel's excellent Xeon processor and Renesas buffer technology," Liu said. "to ensure the stable operation of MCR DIMM, it is critical that data buffers and processors can interact smoothly inside and outside the module."

The data buffer is responsible for transmitting multiple signals from the middle module, and the server CPU is responsible for receiving and processing the signals from the buffer.

Liu also said: "the development of the fastest MCR DIMM in the industry fully demonstrates another great progress of SK Hynix DDR5 technology. We will continue to seek to break through technical barriers and consolidate our leading position in the server DRAM market."

Dr. Dimitrios Ziakas, vice president of memory and IO technology at Intel, said that Intel and SK Hynix are leading the way in memory innovation, high performance for servers, scalable DDR5, as well as other major industry partners.

"the technology adopted this time stems from years of joint research by Intel and key industry partners, and has greatly increased the bandwidth available to Intel Xeon processors. We look forward to applying this technology to future Intel Xeon processors, supporting industry standardization and multi-generation development."

Sameer Kuppahalli, vice president and head of Memory Interface of Renesas Electronics, said that the data buffer took three years from conception to production, and "We are very proud to be able to work with SK Hynix and Intel to turn this technology into excellent products."

CTOnews.com learned that SK Hynix expects that driven by the demand for increased memory bandwidth in high-performance computing, the market for MCR DIMM will gradually open up, and the company plans to mass-produce the product in the future.

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