Shulou(Shulou.com)11/24 Report--

CTOnews.com, November 27, according to Kyodo News, Micron memory Co., Ltd., a subsidiary of Micron Technology located in East Hiroshima City, Hiroshima Prefecture, Japan, started mass production of the most high-end DRAM at the city's Hiroshima factory on the 16th.

According to Meguiar, 1 β technology can improve energy efficiency by about 15%, increase memory density by more than 35%, and the capacity of a single bare chip is as high as 16Gb.

1 β process technology can achieve lower power consumption per bit than ever before, providing smart phones with the most energy-saving memory technology on the market. It will help smartphone makers launch devices with longer battery life, which will be critical for consumers when using energy-intensive, data-intensive applications.

The new JEDEC enhanced dynamic Voltage and Frequency Regulation extension Core (eDVFSC) technology makes 1 β-based LPDDR5X more energy efficient. Adding eDVFSC to the double frequency layer up to 3200 Mbps improves energy-saving control, resulting in lower power consumption based on a unique end-user mode.

Finally, Meguiar said that in the coming year, Meguiar will mass produce 1 β nodes in other applications such as embedded, data center, client, consumer products, industrial and automotive, including display memory and high-bandwidth memory.

CTOnews.com learned that the Hiroshima plant was acquired by Micron when it acquired Elpida in 2013 and built a new plant in 2019 to focus on the production of cutting-edge technology products such as DRAM. Japan's Kyodo news agency reported that in September, in order to consolidate its semiconductor production base, the Japanese government announced a subsidy of up to 46.4 billion yen for Hiroshima plant to enhance equipment.

Memory manufacturers of the last generation of DRAM chips through the 1x, 1Y, 1Z distinction process, 1Xnm process equivalent to 16-19nm level, 1Ynm equivalent to 14-16nm 1Znm process equivalent to 12-14nm level. According to industry sources, the latest 1 α, 1 β and 1 γ may be equivalent to 14-12nm, 12-10nm and 10nm, respectively.

"Meguiar releases LPDDR5X-8500 memory: 15% energy efficiency improvement using advanced 1 β process"

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