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It is reported that SK Hynix is developing UFS4.0 flash memory based on 238 layers of NAND, which is expected to be mass produced in the first half of next year.

2025-02-06 Update From: SLTechnology News&Howtos shulou NAV: SLTechnology News&Howtos > IT Information >

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Thanks to CTOnews.com netizen OC_Formula for the clue delivery! CTOnews.com8 March 16 news, according to foreign media THELEC reported today, the semiconductor industry sources revealed that SK Hynix plans to use 238 layers of NAND (V8) of the latest UFS 4.0 flash memory as early as the first half of next year.

According to the UFS 4.0 memory development plan developed by SK Hynix, it will mainly carry V7 and V8 NAND on UFS 4.0 flash memory, of which V8 is the world's first 238layer NAND flash memory developed by SK Hynix, reducing energy consumption by 21% compared with 176layer NAND (V7). It uses 4D packaging technology. Compared with 3D packaging, the former not only reduces the unit area, but also has higher production efficiency.

THELEC also revealed the data processing speed of the UFS 4.0 flash memory being developed by SK Hynix: continuous reading of 4000 MB/s and continuous writing of 2800 MB/s. The shape specification is 11 × 13 × 0.8mm. In terms of speed alone, the current speed of exposure may only carry a V7 NAND.

For comparison, Samsung's UFS 4.0 flash memory, which debuted on May 4, uses 176layer NAND (V7), continuously reads 4200 MB/s, writes 2800 MB/s continuously, and has a form factor of 11 × 13 × 1mm.

Previously, it was reported that the data transfer speed of SK Hynix 238 layer NAND flash memory is 2.4Gbps, which is 50% higher than that of the previous generation, but it has not yet been applied to UFS 4.0.

238 layer 512GB TLC 4D NAND flash memory developed by ▲ SK Hynix

CTOnews.com has learned that, according to THELEC, SK Hynix has supplied 238 layers of NAND samples to major customer companies and plans for mass production in the first half of next year, so the UFS 4.0 memory with V8 NAND is expected to start mass production as early as the first half of next year.

UFS 4.0Flash memory is the latest standard officially approved in May this year. Its data transmission bandwidth is 23.2Gbps, double that of the previous UFS 3.1.The greater the bandwidth, the faster the data processing speed.

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