Shulou(Shulou.com)11/24 Report--

According to the official website of the Shanghai Institute of Integrated Circuit Materials, the official website of the Shanghai Institute of Integrated Circuit Materials recently published an article reviewing the scientific research and industrialization achievements of the institute in the past two years.

This research institution, jointly initiated by the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences and Shanghai Silicon Industry Group Co., Ltd., is committed to the research and development and industrialization of substrate materials and process materials, facing the needs of enterprises and the landing of industrialization. actively tackle key technological problems.

For example, the institute has developed a full set of solutions for polishing large silicon wafers according to the properties of polishing pads, polishing liquid materials and the effects of polishing processes such as polishing pressure, polishing temperature and polishing fluid flow rate on the flatness of large silicon wafers. Relying on the technology of the institute, the first CMP polishing pad of Shanghai Xinqian Integrated Circuit Co., Ltd. has been officially produced.

In the research and development of lithography materials, the institute adopts innovative paradigm to improve the efficiency of material research and development, and establishes the genome of lithography materials. With the support of high-throughput material preparation platform, short-flow device process platform, high-throughput material characterization platform, material performance database platform and material simulation computing platform, we work with collaborative units to carry out research and development, screening, optimization and application efficiency of lithography materials.

Facing the cutting-edge material technology, Collective Materials Institute and Shanghai Microsystems Institute launched the aluminum nitride thin film material genome project to develop a SOI substrate with embedded cavity (VESOI) and successfully applied it to the fabrication of fully enclosed ring gate (GAA) devices.

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