Shulou(Shulou.com)11/24 Report--

According to Jiwei, according to Chongqing Daily, Chongqing Wanguo Semiconductor Technology Co., Ltd. (hereinafter referred to as "Chongqing Wanguo") has successfully created the first IGBT component independently developed, designed and completed wafer manufacturing and packaging testing in Southwest China. At present, the IGBT component has been tried out by users and is expected to be mass produced by the end of this year. (IGBT,Insulated Gate Bipolar Transistor, insulated gate bipolar transistor)

It is reported that Chongqing Wanguo launched the research and development of IGBT component project at the beginning of this year, which has the characteristics of low saturation voltage, low switching loss and strong current short-circuit capacity, and can be used for kinetic energy conversion between consumer and industrial appliances.

Li Renguo, senior manager of Chongqing Wanguo Market, said that in the shipments in the past 12 months, Chongqing Wanguo has achieved only 3 out of every 1 billion chips.

At present, Chongqing Wanguo has launched the listing plan, and has introduced industry leaders or professional investment institutions such as BOE as strategic investors. In the next step, Chongqing Wanguo will further speed up the design, manufacture and sales of semiconductor chips and semiconductor chip packaging, and continue to launch innovative products.

Encyclopedic knowledge

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a compound fully controlled voltage-driven power semiconductor device composed of (Bipolar Junction Transistor,BJT) bipolar transistor and insulated gate field effect transistor (Metal Oxide Semiconductor,MOS). It has both the advantages of high input impedance of (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) metal-oxide half-field effect transistor and low conduction voltage drop of power transistor (Giant Transistor,GTR). GTR has the advantages of low saturation voltage, high current density and high driving current, while the driving power of MOSFET is very small and the switching speed is fast, but the conduction voltage drop is large and the current density is low. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for converter systems with DC voltage of 600V or above, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and so on.

IGBT is the core device of energy transformation and transmission, commonly known as "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment and other fields.

IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (continuous current diode chip) through a specific circuit. The packaged IGBT module is directly used in frequency converter, UPS uninterruptible power supply and other equipment.

IGBT module has the characteristics of energy saving, convenient installation and maintenance, heat dissipation and stability; at present, most of the products sold in the market are such modular products, and the so-called IGBT also refers to IGBT module; with the promotion of the concept of energy saving and environmental protection, such products will be more and more in the market.

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