Shulou(Shulou.com)11/24 Report--

CTOnews.com November 7 news, recently, the National Star Optoelectronics Research Institute launched a series of NSiC-KS products in the form of TO-247-4L packaging, which can be used in mobile energy storage, photovoltaic inverter, new energy vehicle charging piles and other scenarios.

CTOnews.com learned that with the rapid popularization of industrial 4.0 era and new energy vehicles, industrial power supplies and high-voltage chargers have increasing requirements for switching loss and power density of power devices. The new high-frequency device SiC MOSFET is seizing the new energy market because of its excellent characteristics such as high voltage withstand, low on-resistance and low on-loss.

Through the design of scientific system, the packaging technology of National Star Optoelectronics adopts TO-247-4L with auxiliary source pin as the packaging form of NSiC-KS series products, and applies it to SiC MOSFET, which makes a new breakthrough in switching loss and drive design of discrete devices.

Taking the SiC MOSFET products of the third generation semiconductor NSiC series 1200V 80m Ω of Guoxing Optoelectronics as an example, the SiC MOSFET packaged by NSiC-KS avoids sharing the source circuit between the drive circuit and the power loop, and realizes the decoupling of the two loops, so that the SiC MOSFET switching loss and turn-on loss of the NSiC-KS package are significantly reduced, the switching frequency is faster, and the risk of parasitic inductance and misopening is lower.

In order to meet the market demand, Guoxing Optoelectronic NSiC-KS SiC MOSFET products have a variety of models to choose. At the same time, based on the company has a complete SiC discrete device production line, Guoxing Optoelectronics can provide high-performance, high-reliability, high-quality product technology solutions according to customer needs.

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