Shulou(Shulou.com)11/24 Report--

CTOnews.com, November 7 (Xinhua)-- although no actual product has been released, Samsung Electronics has announced that it has begun mass production of its 236-layer 3D NAND flash memory chip, which the company has named the 8th generation V-NAND.

The new generation of memory chip can bring the transmission speed of 2400MTps, when used with high-end master, it can make the transmission speed of consumer-grade SSD easily exceed 12GBps.

According to reports, the 8th generation V-NAND can provide 1Tb (128GB) solution. Samsung Electronics does not disclose the size and actual density of IC, but they call it the highest bit density in the industry.

Samsung claims that its new generation of 3D NAND flash memory can increase single crystal productivity by 20 per cent compared with existing flash chips of the same capacity, further reducing costs (with the same yield), which could mean that people are expected to buy cheaper solid-state drives of the same capacity.

The company did not disclose the architecture of the new product, but based on the images provided, we can assume that this is a biplanar 3D NAND chip.

SungHoi Hur, executive vice president of flash products and technology at Samsung Electronics, said: "as the demand for denser, larger capacity storage drives higher layers of V-NAND, Samsung has adopted advanced 3D compression technology to reduce surface area and height while avoiding the inter-cell interference that usually occurs during compression." Our 8th generation V-NAND will help meet the fast-growing market demand and enable us to better provide more differentiated products and solutions, which will be the basis for future storage innovation. "

In the middle of this year, Samsung launched its eighth and ninth generation V-NAND products and its fifth generation DRAM products. Prior to this, the company currently provides 512 Gb level 3 unit (TLC) products for V-NAND.

In addition, the fifth generation of DRAM products will be 10nm (1b) devices, which will enter the stage of mass production in 2023. CTOnews.com learned that other DRAM solutions that Samsung is about to launch include 32 Gb DDR5 solutions, 8.5 Gbps LPDDR5X DRAM and 36 Gbps GDDR7 DRAM.

Samsung claims to its V-NAND that it will build 1000 layers of V-NAND by 2030. To achieve this, Samsung is transitioning from its current TLC architecture to a four-tier unit (QLC) architecture to increase density and enable more layers.

Samsung will also devote more resources to DRAM research and development of new architectures and materials, such as High-K, to help extend DRAM beyond 10nm. The company plans to further develop other DRAM solutions, such as memory processing (PIM).

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