Shulou(Shulou.com)11/24 Report--

CTOnews.com, Nov. 4, BusinessKorea reported that Micron has recently sent its low-power dual data rate 5X (LPDDR5X) samples based on the fifth-generation 10nm (1b or 12nm to 13nm) process to major smartphone manufacturers.

Meguiar did not disclose the specific specifications of the new product, but said that compared with the previous version, the energy efficiency of the new product has been improved by 15%, and the number of bits stored in a single area has increased by 35%.

CTOnews.com has reported that Samsung Electronics, SK Hynix and Micron account for more than 90% of the global DRAM market. Samsung ranked first with a market share of 43.3% in the second quarter, followed by SK Hynix (28.1%) and Micron (23.6%), according to market research firm Omdia.

In January last year, Meguiar began mass production of the fourth generation 1a DRAM chip before Samsung Electronics, and announced the launch of the industry's first 176layer NAND flash memory at the end of 2020, when Samsung Electronics and SK Hynix were still focusing on 128layer NAND flash memory.

Micron announced in May that it would begin mass production of 1b DRAM chips in 2022. Considering that Samsung Electronics and SK Hynix plan to mass-produce 1b DRAM products early next year, Meguiar is likely to become the first company to mass-produce 1b DRAM.

It is worth mentioning that Samsung Electronics and SK Hynix apply EUV lithography technology to 1a DRAM products, but Meguiar will continue to use argon fluoride laser technology to produce 1b DRAM, and the company plans to start using EUV technology from the 6th generation of 10nm chips.

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