Shulou(Shulou.com)11/24 Report--

CTOnews.com, October 27, Strategy Analytics Electric vehicle Service (EVS) recently released a report that electric vehicles are faced with consumer concerns about "mileage anxiety" and "charging anxiety". Automakers' response is to further integrate parts, take advantage of advances in power electronics technology to improve power system efficiency, and use 800V + power network to shorten charging time.

CTOnews.com was informed that the report states that silicon carbide (SiC) is one of many wide band gap technologies that are used to improve the efficiency of switching power supplies to drive motors, receive charge through on-board chargers and convert DC current.

Kevin Mak, chief analyst at Strategy Analytics Global Automotive practice (GAP), said: "as carmakers adjust their business to 'all-electric', competition between them has intensified. Wide band gap technology, such as silicon carbide, enables motor inverters to operate at higher junction temperatures, thereby reducing their thermal management requirements. Improving the performance of the power switch leads to a smaller inverter, which makes the electric traction motor rotate faster, improve the torque output, and improve the performance of the battery electric power system. Wide band gap technology can also make components smaller, which means that the size, weight and power of the power system have been improved, while making the integrated system more flexible. The 800 volt technology also enables automakers to use lighter cables and extract electricity faster than using lower voltages. "

Wide band gap or wide band gap (WBG) refers to semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN), in which relatively high energy is required to move electrons from the atomic "valence" band to its "conduction (conduction)" band, where electrons can be used for current flow. the measure of "band gap" is electron volt (eV), silicon (Si) has a band gap of about 1.1eV, and SiC is 3.2eV gan 3.4eV. High band gap can provide higher critical breakdown voltage and lower leakage current, especially at high temperature. The broadband gap device also has a better electron saturation speed, so that it can be switched faster. SiC also has good thermal conductivity.

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