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2025-01-28 Update From: SLTechnology News&Howtos shulou NAV: SLTechnology News&Howtos > IT Information >
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Shulou(Shulou.com)11/24 Report--
Thank CTOnews.com netizens for the delivery of the clues of the aurora meteor! CTOnews.com, October 27 (Xinhua)-- today Redmi officially announced that the Redmi Note 12 exploration version will be equipped with Xiaomi self-developed 210W fairy second charge, which is currently the most powerful in mass production and fast charging in the field of mobile phones.
Redmi has just introduced in detail the 210W fairy second charge that will be carried in the Redmi Note 12 exploration version, involving charging chips, battery technology, double GaN chargers, charging lines, security protection and so on.
According to the official introduction, the 210W fairy second fast charging scheme uses the 3-charge IC architecture. Three high-specification rechargeable IC, the conversion efficiency is as high as 98.5%, the single peak power is 100W, and the upper limit of total power is up to 300W, leaving sufficient performance redundancy to ensure long-term stable output.
In terms of battery technology, the 210W immortal second charge uses 10C high-rate dual cells, each cell input current up to 21000mA. Cell Balance technology will open the internal balance circuit when the difference in voltage / capacity between cells is detected, so as to prevent the aging speed of the cell from increasing. At the same time, the battery itself has also been upgraded in all directions for fast charging.
The 210W fairy second charger is equipped with a double GaN fast charger. The 210W super fast charger has the size of 67.3*64.3*30mm. Compared with the standard 120W fast charger, the power is nearly doubled, but the volume is almost the same, and the power density is as high as 1.62W / cm3. The interior of the charger also adopts the dual heat dissipation design of graphene and glue filling to achieve stable and high power operation for a longer time. C port design, compatible with PD / QC fast charging, compatible with up to 65W power, can directly supply power for notebooks and other devices that support PD fast charging, and also supports 100V-240V wide voltage input.
210W new charging wire, new technology, new material, new structure wire itself has also been comprehensively upgraded, the new connector terminal material has higher conductivity, the upgraded enhanced platinum plating treatment is more resistant to high current electrolytic corrosion. Under the condition that the wire diameter is almost the same as that of 6A wire rod, the number of internal wire core conductors is doubled and the flow capacity is greatly increased. To match the charger, the C to C charger has a built-in Xiaomi custom E-mark chip, which not only supports Xiaomi's 210W fast charging protocol identification, but also compatible with PD / QC protocol.
210W immortal second charge also has a higher level of fast charge protection, in chargers, batteries, mobile phones also do a complete and comprehensive protection. It covers 60 items of safety protection, including overvoltage, overcurrent, overdischarge, high and low temperature, chip and protocol authentication, static electricity, lightning strike and so on.
CTOnews.com learned that the new Redmi Note12 series will be released at 19:00 tonight, and that according to the previous official warm-up, the Note12 series has been upgraded in terms of screen, battery, video and so on. There are four models in the series: Redmi Note12, Redmi Note12 Pro, Redmi Note12 Pro + and Redmi Note12 Exploration Edition. The new phone will be the world's first MediaTek's Tianji 1080 processor, the world's first two-megapixel Samsung HPX sensor, and support OIS optical anti-shake. In terms of software, this series of models are equipped with Xiaomi image brain for the first time, as well as several film-style filters. In terms of charging power, there are 67W, 120W and 210W specifications. Pro series is equipped with OLED flexible straight screen, supports 1920Hz high frequency PWM, ten thousand dimming.
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