Shulou(Shulou.com)11/24 Report--

CTOnews.com, October 3, according to a report in Taiwan's Economic Daily, TSMC, which has the advantage of advanced manufacturing process, is also actively arranging third-generation semiconductors to compete with United Power, World Advanced, LSMC and other manufacturers.

In terms of operation strategy, the top four wafer foundry should not only reduce the impact brought by the business cycle, but also aim at the next wave of industrial growth momentum under the established trend of 5G radio frequency, artificial intelligence (AI), high-speed computing (HPC) and automotive electronic growth.

Liu Deyin, chairman of TSMC, once mentioned that the output value of the third-generation semiconductors is too small, and most of the applications are in the automotive field, which is a special technology, although it is still unable to compare with silicon-based semiconductors at this stage. However, TSMC's third-generation semiconductors should still produce the largest amount.

The legal person pointed out that in cooperation with IDM plants and IC designers, TSMC's first-generation gallium nitride technology platform on silicon substrate was completed last year and further strengthened to support multiple applications, and the second-generation silicon substrate GaN technology platform under development is expected to be completed within this year.

In addition, UMC invested in third-generation semiconductors in Lianying Optoelectronics. According to analysis, UMC and TSMC have different development strategies for third-generation semiconductors. TSMC focuses on gallium nitride and focuses on power semiconductors, while UMC focuses on power and microwave.

The world advanced is to cooperate with equipment materials and silicon substrate factories to develop 8-inch new substrate materials. The world advanced believes that although compound semiconductors account for only 1% of the overall market value of semiconductors, there are business opportunities derived from new materials such as gallium nitride and silicon carbide.

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