Shulou(Shulou.com)05/31 Report--

What is the working principle of SRAM circuit? I believe many inexperienced people don't know what to do about it. Therefore, this paper summarizes the causes and solutions of the problem. Through this article, I hope you can solve this problem.

In recent years, on-chip memory has developed rapidly. According to the International Semiconductor Technology Roadmap (ITRS), with the maturity of ultra-deep submicron manufacturing technology and the development of nano-technology, the characteristic size of transistors is further reduced, and the area proportion of semiconductor memory in on-chip memory is getting higher and higher. Next, Yuxin Electronics introduces the working principle and working process of SRAM.

SRAM write operation.

The write operation is to write the data to the specified SRAM storage unit. First of all, the chip selection signal CEBB is set to a low level, and the read control circuit starts to operate. The 10-bit write address line AB0-AB9, the 16-bit data input DI0-DI15 is ready, the address signal is valid, and the system starts decoding, selecting the memory unit to be written and the data to be written. At that time, when the clock signal CKB high level arrives, the CKB signal control decoding circuit completes the final decoding, and the row of memory cell writing line WWL selected by the row decoding circuit will be opened; 16-bit data is transferred to the writing line BL through the write circuit in the input and output circuit, thus writing the data into the selected memory cell.

SRAM read operation.

The read operation is to read the data stored in the specified unit in the SRAM array. The chip selection signal CEBA is set to a low level, and the read control circuit operates. Like the write operation, the 10-bit read address line AA0-AA9 is ready in advance, and the designated memory cell is selected by the decoder; at the same time, the read bit line RBL is precharged to a high level. After precharging for a period of time, the clock signal CKA arrives, the decoding is completed, and the reading line RWL of the designated memory unit is opened to read the memory cell. At this time, the sensitive amplifier is activated, and the voltage change on the read bit line RBL will be transmitted to the sensitive amplifier. According to the voltage change of the RBL, the sensitive amplifier can send the result to the output circuit, and the output binary sequence can be read out from the port DO0-DO15, thus reading the data of the specific memory cell.

After reading the above, have you mastered the method of how the SRAM circuit works? If you want to learn more skills or want to know more about it, you are welcome to follow the industry information channel, thank you for reading!

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