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What is the basic principle of magnetoresistive random access memory (MRAM)? I believe many inexperienced people don't know what to do about it. Therefore, this paper summarizes the causes and solutions of the problem. Through this article, I hope you can solve this problem.

The difference between MRAM and traditional random access memory is that the information carrier of MRAM is magnetic tunnel junction (MTJ), while the latter is charge. Each magnetic tunnel junction contains a fixed layer and a free layer. The magnetization direction of the fixed layer is fixed, while the magnetization direction of the free layer can be changed by the rotation moment. When the magnetization direction of the two layers is the same, the resistance of the magnetic tunnel junction is the lowest and its state is "0"; on the contrary, the resistance of the magnetic tunnel junction is the highest and its state is "1".

The structure of the most commonly used MRAM unit consists of a NMOS transistor and a MTJ (as a memory element). MTJ is sequentially connected to NMOS. The NMOS transistor is controlled by the word line signal. When reading the data, the NMOS is turned on, and a small voltage difference is added between the bit line and the source line to make the current flow through the MTJ, which is determined by the state of the MTJ. The sense amplifier compares the current with the reference current to determine whether the data stored in the MRAM cell is "O" or "1". When writing data, if you write "O", add a larger positive voltage between the bit line and the source line; if you write "1", add a negative voltage. The minimum current that causes the MTJ to flip is called the threshold current, which is related to the tunnel barrier material, the writing duration and the geometry of the MTJ. The traditional cache structure is connected by H-tree, and the number and size of rows and rows can be optimized using CACTI tools.

After reading the above, have you mastered the basic principles of MRAM? If you want to learn more skills or want to know more about it, you are welcome to follow the industry information channel, thank you for reading!

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