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This article shows you how MRAM can replace the embedded memory in the car MCU. The content is concise and easy to understand, which can definitely brighten your eyes. I hope you can get something through the detailed introduction of this article.

Spin injection MRAM not only has the advantages of existing memory such as DRAM and NAND flash memory in function, but also surpasses almost all existing memory in performance, so it is likely to win a huge market (see Table 1). Specifically in terms of function, spin injection MRAM is as non-volatile as flash memory, even if the power is cut off, the information will not be lost, and it is as random access as DRAM.

Table 1 comparison of technical specifications of memory

In terms of performance, the read-1 erase time of spin-injected MRAM is very short, all between 2ns~20ns. It does not require the erase operations necessary for flash memory, and the write time is several orders of magnitude less than that of flash memory. Even compared with the high-performance DRAM in the existing memory (the read-1 write time is 30ns~50ns), the high performance of spin-injected MRAM is still outstanding. In addition, it can erase and write more than 1015 times, which is equivalent to DRAM and SRAM, and greatly exceeds the 105 times of flash memory.

The spin injection MRAM, which exceeds the existing memory in terms of function and performance, is likely to replace the multiple memories used in the device (see figure 1). If the research and development of key technologies go smoothly, the future popularization and application of spin injection MRAM will be roughly divided into two stages. In the first stage, it will replace the embedded memory used in the vehicle MCU, and then in the second stage, it will replace the MCP in the mobile phone as well as independent DRAM and independent NOR flash memory.

Figure 1 65nm products will replace embedded memory and 45nm products will replace stand-alone memory

At present, various manufacturers have basically mastered the key technologies used to realize the first phase of application. In the vehicle MCU, the sram memory used when the equipment is working and the flash memory used to store programs are usually integrated on the same chip. If you can integrate spin injection MRAM into MCU, you can replace the above SRAM and flash memory.

MCU users also showed a positive attitude towards spin injection into MRAM. At present, the number of erasable and writable times of flash memory integrated in vehicle MCU is too small. It is hoped that memory devices with better read / write performance than flash memory can be used. I heard that MRAM is erasable and writable more times than flash memory, and its performance has been improved. If the cost of the two types of storage is the same, you will definitely choose MRAM. When the spin injection MRAM using 65nm technology is in mass production, it will be possible to replace the embedded memory in the vehicle MCU.

The above is how MRAM can replace the embedded memory in the car MCU. Have you learned the knowledge or skills? If you want to learn more skills or enrich your knowledge reserve, you are welcome to follow the industry information channel.

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