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This article analyzes "what are the characteristics of AO3423"? The content is detailed and easy to understand. Friends who are interested in "what are the characteristics of AO3423" can follow the editor's train of thought to read it slowly and deeply. I hope it will be helpful to you after reading. Let's follow the editor to learn more about "what are the characteristics of AO3423".

The AO3423 uses advanced trench technology to provide excellent R & D DS (ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or as a PWM application. This is ESD protection. The standard product AO3423 is Pb-free (in accordance with ROHS & Sony 259 specification). AO3423L is a green product ordering option. AO3423 and AO3423L are electrically identical.

Category: discrete semiconductor products:

Transistor-FET,MOSFET-single

Manufacturer: Alpha & Omega Semiconductor Inc.

Series:-

Packaging: cutting band (CT)

Packaging form: patch type

Packaging materials: metal packaging

Part status: on sale

FET type: P channel

Technology: MOSFET (metal oxide)

Drain-source voltage (Vdss): 20V

Current-continuous drain (Id) (25 °C): 2A (Ta) driving voltage (maximum Rds On, minimum Rds On): 2.5V Rds On at 10V different Id,Vgs (maximum): 92 milliohms @ 2A Vgs (th) at 10V different Id (maximum): 1.4V @ 250kV gate charge (Qg) at different Vgs (maximum): 6.6nC @ 4.5VVgs (maximum): input capacitance (Ciss) at ±12V different Vds (maximum): 620pF @ 10VFET function:-Power dissipation (maximum): 1.4W (Ta) operating temperature:-55 °C ~ 150 °C (TJ) installation type: surface mount

Supplier device package: SOT-23-3L

Package / shell: TO-236-3 Magi SCmuri 59 Magi SOT Mel 23-3

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