Shulou(Shulou.com)06/03 Report--

This article shows you how to view the development of MRAM, the content is concise and easy to understand, it will definitely brighten your eyes. I hope you can get something through the detailed introduction of this article.

MRAM is a new type of storage medium which combines non-volatile and random access characteristics with resistor as storage mode, and can be used as both memory and hard disk. The write speed can reach thousands of times that of NAND flash memory. In addition, the production process requirements are low, the rate of good products is high, and the cost can be well controlled. In terms of life, due to the special storage mode of MRAM, the life durability of products is also much longer than that of traditional RAM. Large-scale popularization still faces challenges.

There is no doubt that MRAM has advantages in non-volatile, write speed, life and other aspects because of its unique storage method. However, whether it can be widely adopted still faces a series of challenges.

Generally speaking, MRAM usually consists of three parts: semiconductor substrate, magnetic spin tunnel junction (MagneticTunnelJunction,MTJ) and magnetic generator. According to the industry research report "EmergingMemoriesRampUp", the important challenge faced by MRAM in the process of wide promotion is that the materials and processes used are different from those of traditional CMOS manufacturing.

How long will it be before the large-scale application that the performance life far exceeds that of NAND,MRAM?

Currently, MRAM is produced as a "back-end production line" (BEOL) process in separate fabs, requiring new equipment that is not used in traditional CMOS manufacturing processes, such as ion beam etching and new sputtering targets, the report said. In order to reduce the cost of embedded MRAM products, its manufacturing needs to enter the CMOS fab and become a part of conventional device production.

KevinMoraes, vice president of metal deposition products at AppliedMaterials, said that in the MTJ structure, the storage layer, the tunnel barrier layer and the reference layer are stacked on top of each other. Some of these stacked materials are used as barrier films, which are very thin and easy to be destroyed, so how to deposit these films accurately is also very important.

In addition to Samsung has been actively promoting the development of MRAM, Intel also announced in the first half of this year that it is ready for mass production of eMRAM chips. Armour has also issued a number of MRAM-related patents to promote the development of technology. As a leader in MRAM, EVERSPIN suppliers are still committed to R & D and innovation to provide new products to the market.

It is reported that Samsung can improve the capacity and yield by improving the uniformity of MTJ structure to reduce the deviation between impedance value and recording current, improve the manufacturing process, and reduce the defect density that will adversely affect MTJ.

With the development of storage devices towards high integration, the development of MRAM miniaturization is also faced with difficulties.

At present, the new storage represented by MRAM has developed to a critical stage. Whether it can become the next generation storage medium to replace NAND flash memory, in addition to the continuous improvement of materials and technology, it is also very important to build a perfect device technology ecosystem. It is believed that under the guidance of market demand and the promotion of major manufacturers, storage products must develop in the direction of higher performance, larger capacity and better cost.

The above content is how to view the development of MRAM. Have you learned any knowledge or skills? If you want to learn more skills or enrich your knowledge reserve, you are welcome to follow the industry information channel.

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